Investigation of blue InGaN light-emitting diodes with gradual wide wells and thin barriers

著录项

• 来源
  《Optical and quantum electronics》 |2016年第9期|444.1-444.7|共7页
• 作者

  Si-Ming Zeng; Shu-Wen Zheng; Guang-Han Fan;

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• 作者单位

  Experimental Teaching Center, Guangdong University of Technology, Guangzhou 510006, China,Laboratory of Nanophotonic Functional Materials and Devices, Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China;

  Laboratory of Nanophotonic Functional Materials and Devices, Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China;

  Laboratory of Nanophotonic Functional Materials and Devices, Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China;

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• 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  Gradual wells; Light-emitting diodes; Numerical simulation; Efficiency droop;

  机译：逐步井;发光二极管;数值模拟效率下降;