Analysis of efficiency limitations in high-power InGaN/GaN laser diodes

Joachim Piprek

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Analysis of efficiency limitations in high-power InGaN/GaN laser diodes

机译：大功率InGaN / GaN激光二极管的效率限制分析

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Twenty years after their first demonstration by Shuji Nakamura, InGaN/GaN lasers still exhibit less than 40 % electrical-to-optical power conversion efficiency. This paper investigates reasons behind the efficiency limitation by advanced numerical simulations of measured high-power laser characteristics. Auger recombination is identified as a major limitation at all power levels, but the inherently high series resistance becomes the most restrictive limitation at higher power. Since the traditional efficiency analysis method produces misleading results, we propose an alternative method that is also applicable without numerical simulation.

机译：InGaN / GaN激光器在中村修二（Shuji Nakamura）的首次展示之后的20年中，仍然表现出不到40％的电光功率转换效率。本文通过对高功率激光特性进行高级数值模拟，研究了效率限制背后的原因。俄歇复合被认为是所有功率水平的主要限制，但是固有的高串联电阻在更高功率下成为最大的限制。由于传统的效率分析方法会产生误导性的结果，因此我们提出了一种替代方法，该方法也可以在没有数值模拟的情况下应用。

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来源
《Optical and quantum electronics》 |2016年第10期|471.1-471.8|共8页
作者
Joachim Piprek;
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作者单位

NUSOD Institute LLC, Newark, DE 19714-7204, US;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类
关键词
Laser diode; InGaN/GaN; Efficiency; Auger recombination; Series resistance; Hole conductivity;

机译：激光二极管InGaN / GaN;效率;俄歇重组;串联电阻;孔电导率;

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专利

1. Mitigation of Efficiency Droop in an Asymmetric GaN-Based High-Power Laser Diode With Sandwiched GaN/InAlN/GaN Lower Quantum Barrier [J] . Tian Lan, Guangzheng Zhou, Ying Li, Photonics Journal, IEEE . 2018,第6期

机译：具有夹层GaN / InAlN / GaN下量子势垒的不对称GaN基大功率激光二极管中的效率下降的缓解
2. High-Power Blue-Violet Semipolar (2021) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm2 [J] . Yuji Zhao, Shinichi Tanaka, Chih-Chien Pan, Annales de l'I.H.P . 2011,第8期

机译：高功率蓝紫色半极性（2021）InGaN / GaN发光二极管，具有200A / cm2的低效率下垂
3. 30-mW-Class High-Power and High-Efficiency Blue Semipolar (1011) InGaN/GaN Light-Emitting Diodes Obtained by Backside Roughening Technique [J] . Yuji Zhao, Junichi Sonoda, Chih-Chien Pan, Annales de l'I.H.P . 2010,第10期

机译：通过背面粗糙化技术获得的30mW级高功率和高效率蓝色半极性（1011）InGaN / GaN发光二极管
4. Degradation modes of high-power InGaN/GaN laser diodes on low-defect GaN substrates [C] . C. C. Kim, Y. Choi, Y. H. Jang, Conference on Gallium Nitride Materials and Devices; 20080121-24; San Jose,CA(US) . 2008

机译：低缺陷GaN衬底上大功率InGaN / GaN激光二极管的降解模式
5. Modeling and Characterization of High-power Electronic Devices: System Analysis of Laser Diodes with Flash Boiling and GaN HEMT Reliability Modeling [D] . Schlenker, Evan L. 2018

机译：高功率电子设备的建模与鉴定：闪光沸腾和GAN HEMT可靠性造型激光二极管的系统分析
6. Investigation of Photonic-Crystal-Structured p-GaN Nanorods Fabricated by Polystyrene Nanosphere Lithography Method to Improve the Light Extraction Efficiency of InGaN/GaN Green Light-Emitting Diodes [O] . Po-Hsun Lei, Po-Chun Yang, Po-Chun Huang 2021

机译：聚苯乙烯纳米光学光刻法制备的光子晶体结构P-GAN纳米棒的研究提高了INGAN / GAN绿色发光二极管光提取效率
7. Design and Analysis of AlGaN/InGaN/GaN and InAlN/InGaN/GaN HEMTs for High-Power Wide Bandwidth Applications [O] . REVATHY A, C.S. Boopathi, D. Nirmal 2021

机译：Algan / Ingan / GaN和Inaln / Ingan / GaN HEMTS的设计与分析，高功率宽带宽应用
8. MBE Growth and Properties of GaN, InGaN and GaN/InGaN Quantum Well Structures for Laser Diode Applications [R] . Schetzina, J. F. 2001

机译：用于激光二极管应用的GaN，InGaN和GaN / InGaN量子阱结构的mBE生长和性质

Analysis of efficiency limitations in high-power InGaN/GaN laser diodes

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