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首页> 外文期刊>Optical and quantum electronics >Spectral response characteristics of novel ion-implanted planar GaAs blocked-impurity-band detectors in the terahertz domain
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Spectral response characteristics of novel ion-implanted planar GaAs blocked-impurity-band detectors in the terahertz domain

机译：太赫兹域中新型离子注入平面GaAs阻杂带检测器的光谱响应特性

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摘要

Spectral response characteristics of novel planar GaAs blocked-impurity-band (BIB) detector with the absorption region formed by ion implantation have been investigated. Processing technology and simulation method are described in detail. For obtaining a deep and flat implantation region, four-time-implantation scheme with different implantation energy and dose is proposed. Our results show that the novel planar GaAs BIB detector can response radiations with wavelength range from 165 to 400 μm, corresponding to frequency range from 750 GHz to 1.8 THz, which is perfectly suitable for the security application. An empirical formula is proposed to predict the dependence of spectral width on the depth of absorption region. It is demonstrated that a trade-off between responsivity and dark current has to be made for the optimal depth of absorption region.
机译：研究了具有离子注入形成吸收区的新型平面GaAs阻挡杂质带（BIB）探测器的光谱响应特性。详细介绍了处理技术和仿真方法。为了获得深而平坦的注入区域，提出了具有不同注入能量和剂量的四次注入方案。我们的结果表明，新型平面GaAs BIB检测器可以响应波长范围为165至400μm（对应于750 GHz至1.8 THz的频率）的辐射，非常适合安全应用。提出了经验公式来预测光谱宽度对吸收区深度的依赖性。结果表明，必须在响应度和暗电流之间进行权衡，才能获得最佳的吸收区域深度。

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  • 来源
    《Optical and quantum electronics》 |2016年第11期|518.1-518.10|共10页
  • 作者

    Xiaodong Wang; Bingbing Wang; Yulu Chen; Liwei Hou; Wei Xie; Xiaoyao Chen; Ming Pan;

  • 作者单位

    No. 50 Research Institute of China Electronics Technology Group Corporation, 318 Chang He Road, Shanghai 200331, China;

    No. 50 Research Institute of China Electronics Technology Group Corporation, 318 Chang He Road, Shanghai 200331, China;

    No. 50 Research Institute of China Electronics Technology Group Corporation, 318 Chang He Road, Shanghai 200331, China;

    No. 50 Research Institute of China Electronics Technology Group Corporation, 318 Chang He Road, Shanghai 200331, China;

    No. 50 Research Institute of China Electronics Technology Group Corporation, 318 Chang He Road, Shanghai 200331, China;

    Laboratory of Advanced Material, Fudan University, Shanghai 200438, China;

    No. 50 Research Institute of China Electronics Technology Group Corporation, 318 Chang He Road, Shanghai 200331, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    GaAs; Blocked-impurity-band (BIB); Blocking region; Absorption region; Dark current; Spectral response;

    机译：砷化镓;阻塞杂质带（BIB）;阻塞区域;吸收区暗电流光谱响应;

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