Influences of Mg doping and N vacancy on the optoelectronic properties of GaN nanowires

著录项

• 来源
  《Optical and quantum electronics》 |2016年第11期|494.1-494.9|共9页
• 作者

  Si-Hao Xia; Lei Liu; Yike Kong; Yu Diao;

  展开▼
• 作者单位

  Department of Optoelectronic Technology, School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing 210094, China;

  Department of Optoelectronic Technology, School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing 210094, China;

  Department of Optoelectronic Technology, School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing 210094, China;

  Department of Optoelectronic Technology, School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing 210094, China;

  展开▼
• 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  Mg doping; N vacancy; GaN nanowires; Optoelectronic properties;

  机译：镁掺杂;N空缺;GaN纳米线;光电特性;