Optoelectronic properties of Mg doping GaN nanowires

著录项

• 来源
  《Optical and quantum electronics》 |2016年第11期|493.1-493.12|共12页
• 作者

  Yike Kong; Lei Liu; Sihao Xia; Yu Diao; Honggang Wang; Meishan Wang;

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• 作者单位

  School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing 210094, China;

  School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing 210094, China;

  School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing 210094, China;

  School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing 210094, China;

  School of Physics and Optoelectronic Engineering, Ludong University, Yantai 264025, China;

  School of Physics and Optoelectronic Engineering, Ludong University, Yantai 264025, China;

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• 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  First-principles; Mg doping; GaN nanowires; Electronic structure;

  机译：第一原理;镁掺杂;GaN纳米线;电子结构;