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首页> 外文期刊>Optical and quantum electronics >Structural, morphological and optical properties of In_2S_3 thin films obtained by SILAR method
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Structural, morphological and optical properties of In_2S_3 thin films obtained by SILAR method

机译：通过SILAR方法获得的In_2S_3薄膜的结构，形态和光学性质

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摘要

In_2S_3 thin films have been elaborated onto glass substrate by SILAR method at room temperature using different immersion time in the solution of cation and anion and fixing the rinsing time. The film composition, morphology and structure were investigated using energy dispersive X-ray analysis (EDAX), scanning electron microscopy (SEM) and X-ray diffraction techniques. Optical properties, such transmission and band gap have been also analyzed. The effects of annealing on the morphological structure thin films are also described. The x-rays diffraction spectra indicated that the formed compounds are β-In_2S_3 polycrystalline thin films with In_6S_7 as second phase in sample S1 and sample S2 and no another phase in sample 3. SEM revealed homogeneous and relatively uniform films and EDAX shows sample 3 with S/In=1.44. For sample 1 and sample 2, we noted an increase of band gap when rinsing time increases.
机译：In_2S_3薄膜在室温下通过SILAR方法在阳离子和阴离子溶液中的浸入时间不同，并固定了漂洗时间，从而在玻璃基板上制成了。使用能量色散X射线分析（EDAX），扫描电子显微镜（SEM）和X射线衍射技术研究了膜的组成，形态和结构。还分析了光学性质，例如透射率和带隙。还描述了退火对形态结构薄膜的影响。 X射线衍射光谱表明，形成的化合物是样品S1和样品S2中第二相为In_6S_7的β-In_2S_3多晶薄膜，样品3中没有第二相。SEM显示均匀且相对均匀的膜，EDAX显示样品3具有S /输入= 1.44。对于样品1和样品2，我们注意到漂洗时间增加时带隙增加。

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  • 来源
    《Optical and quantum electronics》 |2014年第1期|247-257|共11页
  • 作者

    T. Sall; A. Raidou; S. Elfarrass; B. Hartiti; B. Mari; A. Qachaou; M. Fahoumel;

  • 作者单位

    L.P.M.C. Faculte des Sciences, Universite Ibn Tofail, 133-14000 Kenitra, Morocco;

    L.P.M.C. Faculte des Sciences, Universite Ibn Tofail, 133-14000 Kenitra, Morocco;

    LPMAER, Department of Physics, University Hassan Ⅱ FSTM Mohammedia, Mohammedia, Morocco;

    LPMAER, Department of Physics, University Hassan Ⅱ FSTM Mohammedia, Mohammedia, Morocco;

    Laboratori de Tecnologia Optoelectronica I Fotovoltaica, Universidad Politecnica de Valencia, Valencia, Spain;

    L.P.M.C. Faculte des Sciences, Universite Ibn Tofail, 133-14000 Kenitra, Morocco;

    L.P.M.C. Faculte des Sciences, Universite Ibn Tofail, 133-14000 Kenitra, Morocco;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    In_2S_3; Thin films; SILAR method; Photovoltaic;

    机译：In_2S_3;薄膜;SILAR方法;光伏发电;

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