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Phototransistor noise model based on noise measurements on PNP PIN phototransistors

机译：基于PNP PIN光电晶体管噪声测量的光电晶体管噪声模型

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摘要

A noise model for phototransistors in open base configuration is presented. The model was developed from the noise measurements on four different phototransistor designs. The extracted current gains from the noise model were verified by measured current gains from Gummel measurements. Furthermore the current noise spectral density was modeled and compared with the noise measurements. A difference of less than 12% in the current gain was achieved. In addition to the extracted current gains also the most dominant shot noise terms including their values of each phototransistor are extracted.
机译：提出了在开放基极配置中的光电晶体管的噪声模型。该模型是根据四种不同光电晶体管设计的噪声测量结果开发的。通过从Gummel测量中测量到的电流增益来验证从噪声模型提取的电流增益。此外，对当前的噪声频谱密度进行建模，并与噪声测量结果进行比较。电流增益的差异小于12％。除了提取的电流增益以外，还提取包括每个光电晶体管的值在内的最主要的散粒噪声项。

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