Lateral carrier confinement and threshold current reduction in InGaN QW lasers with deeply etched mesa

Md. Mahbub Satter; Paul Douglas Yoder

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Lateral carrier confinement and threshold current reduction in InGaN QW lasers with deeply etched mesa

机译：具有深蚀刻台面的InGaN QW激光器的横向载流子限制和阈值电流减小

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Shallow etch depths may contribute to a reduction in the optical gain of multiple quantum well (MQW) lasers through the lateral diffusion of carriers away from the region of greatest optical intensity. Deeply etched mesas can prevent this lateral diffusion, but this practice may itself contribute to a degradation of optical gain if the sidewalls are not effectively passivated. Simulation results considering the effects of surface recombination velocity (SRV) at the edge of etched active layers indicate that SRV must be reduced below approximately 105 cm/s in order for deep etch designs to provide benefit. Very few experimental studies quantify the efficiency of GaN surface passivation in terms of SRV. Further experimental studies are required to better assess the viability of deep etch MQW laser designs.

机译：浅蚀刻深度可能会通过载流子从最大光强度区域横向扩散而导致多量子阱（MQW）激光器的光学增益降低。深度蚀刻的台面可以防止这种横向扩散，但是如果侧壁没有得到有效的钝化，这种做法本身可能会导致光学增益的降低。考虑蚀刻活性层边缘的表面复合速度（SRV）影响的模拟结果表明，SRV必须降低到大约105 cm / s以下，以使深蚀刻设计受益。很少有实验研究根据SRV量化GaN表面钝化的效率。需要进行进一步的实验研究，以更好地评估深蚀刻MQW激光器设计的可行性。

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来源
《Optical and quantum electronics》 |2011年第13期|p.747-754|共8页
作者
Md. Mahbub Satter; Paul Douglas Yoder;
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作者单位

Georgia Institute of Technology, Atlanta, Georgia 30332, USA;

Georgia Institute of Technology, Atlanta, Georgia 30332, USA;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类
关键词
edge emitting laser diode; deeply etched mesa; sidewall passivation; surface recombination velocity;

机译：边缘发射激光二极管;深深蚀刻的台面;侧壁钝化表面复合速度;

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专利

1. Lateral carrier confinement and threshold current reduction in InGaN QW lasers with deeply etched mesa [J] . Md. Mahbub Satter, Paul Douglas Yoder Optical and Quantum Electronics . 2011,第11a13期

机译：具有深蚀刻台面的InGaN QW激光器的横向载流子限制和阈值电流减小
2. Selectively Etched Tunnel Junction for Lateral Current and Optical Confinement in InP-Based Vertical Cavity Lasers [J] . M.H.M.Reddy, T.Asano, D.Feezell, Journal of Electronic Materials . 2004,第2期

机译：基于InP的垂直腔激光器中的横向电流和光学限制的选择性蚀刻隧道结
3. Improved carrier confinement and distribution in InGaN light-emitting diodes with three-layer staggered QWs [J] . Li-E. Cai, Chao-Zhi Xu, Fei-Bing Xiong, AIP Advances . 2021,第7期

机译：采用三层交错QW的IngaN发光二极管改进了载体限制和分布
4. Lateral carrier confinement and threshold current reduction in GaN QW lasers with deeply etched mesa [C] . Satter Md. M., Yoder P. D. 10th International Conference on Numerical Simulation of Optoelectronic Devices . 2010

机译：具有深蚀刻台面的GaN QW激光器的横向载流子限制和阈值电流减小
5. Lateral carrier confinement in vertical cavity lasers by selective intermixing. [D] . Naone, Ryan Likeke. 2000

机译：通过选择性混合，将载流子横向限制在垂直腔激光器中。
6. Enhancing carrier transport and carrier capture with a good current spreading characteristic via graphene transparent conductive electrodes in InGaN/GaN multiple-quantum-well light emitting diodes [O] . Shih-Wei Feng, Ying-Hsiang Wang, Chin-Yi Tsai, -1

机译：通过InGaN / GaN多量子阱发光二极管中的石墨烯透明导电电极以良好的电流扩散特性增强载流子传输和载流子捕获
7. Threshold Current Reduction of GaAs/AlGaAs Quantum Cascade Laser due to the Deep Mesa Structure [O] . Il-Ki Han, Jin-Dong Song, Jung-Il Lee 2008

机译：由于深层间结构，GaAs / Algaas量子级联激光器的阈值电流降低
8. Quantum Well Width Dependence of Threshold Current Density in InGaN Lasers;Applied Physics Letters [R] . Amano, H. , Chow, W. W. , Han, J. , 1999

机译：InGaN激光器中阈值电流密度的量子阱宽度依赖性;应用物理快报

Lateral carrier confinement and threshold current reduction in InGaN QW lasers with deeply etched mesa

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