• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Optical and quantum electronics >Effects of absorption layer characteristic on spectral photoresponse of mid-wavelength InSb photodiodes
【24h】

Effects of absorption layer characteristic on spectral photoresponse of mid-wavelength InSb photodiodes

机译：吸收层特性对中波长InSb光电二极管光谱光响应的影响

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

We report on two dimensional numerical simulations of photoresponse characteristic for mid-wavelength InSb infrared photodiodes. Effects of thickness of absorption layer on the photoresponse have been investigated for both front-side and back-side illuminated devices. Optimal thickness of absorption layers for different diffusion lengths is extracted theoretically. Our work shows that the optimal thicknesses of absorption layers strongly depend on the minority carrier lifetimes. An empirical formula is proposed to predict reasonable optimal thicknesses of absorption layer by numerically analyzing its correlations with the diffusion lengths. It is also found that the positive interface fixed charge can reduce the spectral photoresponse due to the charge-induced p-n junction.
机译：我们报告中波长InSb红外光电二极管的光响应特性的二维数值模拟。对于正面和背面照明装置，已经研究了吸收层的厚度对光响应的影响。理论上提取了不同扩散长度的吸收层的最佳厚度。我们的工作表明，吸收层的最佳厚度在很大程度上取决于少数载流子的寿命。提出了一个经验公式，通过数值分析其与扩散长度的相关性来预测吸收层的合理最佳厚度。还发现由于电荷诱导的p-n结，正界面固定电荷可以减少光谱光响应。

著录项

  • 来源
    《Optical and quantum electronics》 |2011年第13期|p.801-808|共8页
  • 作者

    W.D.Hu; X.S.Chen; Z.H.Ye; C.Meng; Y.Q.Lv; W. Lu;

  • 作者单位

    National Lab for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,500 Yu Tian Road, Shanghai 200083, China;

    National Lab for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,500 Yu Tian Road, Shanghai 200083, China;

    Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics,Chinese Academy of Science, 500 Yu Tian Road, Shanghai 200083, China;

    Luoyang Optoelectronic Institute, Luoyang, Henan 471009, China;

    Luoyang Optoelectronic Institute, Luoyang, Henan 471009, China;

    National Lab for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,500 Yu Tian Road, Shanghai 200083, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    numerical simulation; design; InSb infrared photodiode; spectral response;

    机译：数值模拟设计;InSb红外光电二极管;光谱响应;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号