Simulation of InGaN/GaN multiple quantum well light-emitting diodes with quantum dot model for electrical and optical effects

C. S. XIA; W. D. HU; C. WANG; Z. F. LI; X. S. CHEN; W. LU; Z. M. SIMON LI; Z. Q. LI

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Simulation of InGaN/GaN multiple quantum well light-emitting diodes with quantum dot model for electrical and optical effects

机译：利用量子点模型模拟InGaN / GaN多量子阱发光二极管的电和光效应

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We report a 2D simulation of electrical and optical characteristics of green color InGaN/GaN multiple quantum well light-emitting diodes by APSYS software with a dot-in-well model. The In-rich quantum dot-like structure in InGaN/GaN multiple quantum wells has been considered in the LED experimental data analysis. Simulation results based on the quantum dot model are in better agreement with the experimental data than those based on the purely quantum well model, indicating that the quantum dot spontaneous emission and the non-equilibrium quantum transport play important roles in the InGaN/GaN multiple quantum well light-emitting diodes.

机译：我们通过APSYS软件使用点入孔模型报告绿色InGaN / GaN多量子阱发光二极管的电学和光学特性的二维模拟。 LED实验数据分析中已经考虑了InGaN / GaN多量子阱中的In-In量子点状结构。与基于纯量子阱模型的仿真结果相比，基于量子点模型的仿真结果与实验数据更加吻合，表明量子点自发发射和非平衡量子输运在InGaN / GaN多量子中起着重要作用。良好的发光二极管。

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来源
《Optical and quantum electronics》 |2006年第14期|p.1077-1089|共13页
作者
C. S. XIA; W. D. HU; C. WANG; Z. F. LI; X. S. CHEN; W. LU; Z. M. SIMON LI; Z. Q. LI;
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作者单位

National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences. 500 Yu Tian Road, Shanghai 200083, China;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类光学;
关键词
InGaN/GaN; in-rich quantum dot; light-emitting diode (LED); simulation; quantum dot model;

机译：InGaN / GaN;富量子点;发光二极管（LED）;模拟;量子点模型;

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1. The effects of temperature on optical properties of InGaN/GaN multiple quantum well light-emitting diodes [J] . Yi Li, Youhua Zhu, Jing Huang, Journal of Applied Physics . 2017,第5期

机译：温度对InGaN / GaN多量子阱发光二极管光学性能的影响
2. Enhanced optical performance of amber emitting quantum dots incorporated InGaN/GaN light-emitting diodes with growth on UV-enhanced electrochemically etched nanoporous GaN [J] . C. B. Soh, W. Liu, H. Hartono, Applied Physics Letters . 2011,第19期

机译：掺入InGaN / GaN发光二极管的琥珀色发光量子点的光学性能增强，并且在紫外增强的电化学刻蚀纳米多孔GaN上具有生长
3. Effects of ${hbox{H}}_{{2}}$ in GaN Barrier Spacer Layer of InGaN/GaN Multiple Quantum-Well Light-Emitting Diodes [J] . Lai W.-C., Yang Y.-Y. Display Technology, Journal of . 2013,第4期

机译：$ {hbox {H}} _ {{2}} $在InGaN / GaN多量子阱发光二极管的GaN隔离层中的作用
4. Simulation of InGaN/GaN multiple quantum well light-emitting diodes with Quantum Dot electrical and optical effects [C] . C. S. Xia, W. Lu, Z. M. Simon Li, International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices . 2006

机译：用量子点电和光学效应模拟IngaN / GaN多量子阱发光二极管
5. InGaN/GaN Multiple Quantum Well Light-Emitting Diodes grown on Polar, Semi-polar and Non-Polar Orientations. [D] . Mukund, Aadhithya Hosalli. 2014

机译：以极性，半极性和非极性方向生长的InGaN / GaN多量子阱发光二极管。
6. InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers [O] . Wenbin Lv, Lai Wang, Jiaxing Wang, 2012

机译：具有优化的GaN势垒的InGaN / GaN多层量子点黄绿色发光二极管
7. InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers [O] . Wenbin Lv, Lai Wang, Jiaxing Wang, 2012

机译：具有优化的GaN势垒的InGaN / GaN多层量子点黄绿色发光二极管

Simulation of InGaN/GaN multiple quantum well light-emitting diodes with quantum dot model for electrical and optical effects

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