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Modeling of intersubband transitions in quantum well infrared photodetectors with complex potential profiles

机译:具有复杂电位分布的量子阱红外光电探测器中子带间跃迁的建模

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摘要

The subband energy dispersions and optical intersubband transitions in n-type InGaAs/Al_xGa_(1-x)As quantum well infrared photodetector (QWIP) with linear-graded barriers are calculated using an 8-band k·p model combined with the envelope-function Fourier expansion. The relaxation of quantum confinement in the growth direction has been taken into reasonable consideration. This work is helpful for the analysis and the design of QWIPs with complex well and barrier structures.
机译:结合包络函数使用8波段k·p模型计算具有线性渐变势垒的n型InGaAs / Al_xGa_(1-x)As量子阱红外光电探测器(QWIP)的子带能量色散和子带间跃迁傅立叶扩展。已经合理地考虑了在生长方向上量子限制的松弛。这项工作对具有复杂井壁和屏障结构的QWIP的分析和设计很有帮助。

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