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Monte Carlo modeling of phonon-assisted carrier transport in cubic and hexagonal gallium nitride

机译：立方和六方氮化镓中声子辅助载流子传输的蒙特卡洛模型

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摘要

Monte Carlo method is employed for the calculations of electron and hole transport characteristics of cubic and hexagonal GaN at T=300 K in the fields of E <= 1000 kV/cm(-1.) It is shown that electron drift velocity and mobility is heavily reduced in hexagonal crystals due to additional phonon modes (similar to 26 meV) and by fast electron scattering between the lowest Gamma(1) valley and the minimally (similar to 400 meV) up-shifted Gamma(3) valley. Intervalley scattering is mediated most efficiently by the low-energy (similar to 2 meV) acoustic phonons. The randomizing scattering is even more pronounced in p-type crystals where the sub-bands of light and heavy holes merge at the Gamma-point of Brillouin zone. Cubic phase crystals are concluded to be advantageous for ultrafast electronic and photonics device performance because electron drift mobility is higher by an order of magnitude, and the hole mobility is several times higher than those in hexagonal phase.
机译：在E <= 1000 kV / cm（-1）的场中，采用蒙特卡罗方法计算了T = 300 K时立方和六方GaN的电子和空穴传输特性。结果表明，电子漂移速度和迁移率是由于附加的声子模式（类似于26 meV）以及最低的Gamma（1）谷和最小的（类似于400 meV）上移的Gamma（3）谷之间的快速电子散射，六角形晶体中的结晶大大减少了。低能（类似于2 meV）声子可最有效地介导谷间散射。随机散射在p型晶体中更为明显，在该晶体中，轻孔和重孔的子带在布里渊区的γ点融合。得出结论，立方相晶体对于超快电子和光子器件性能具有优势，因为电子漂移迁移率高一个数量级，并且空穴迁移率是六方相的几倍。

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