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首页> 外文期刊>Optical and quantum electronics >Lateral current injection (LCI) multiple quantum-well 1.55 mu m laser with improved gain uniformity across the active region
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Lateral current injection (LCI) multiple quantum-well 1.55 mu m laser with improved gain uniformity across the active region

机译：横向电流注入（LCI）多量子阱1.55μm激光器，在整个有源区具有改善的增益均匀性

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摘要

A simulation study of lateral current injection 1.55 mum laser with strain-compensated multiple quantum-well (MQW) active region (InGaAsP well, InGaAlAs barrier) is presented using self-consistent 2D numerical simulations. The effects of different mesa width and p-doping in the QWs on the carrier and gain uniformity across the active region are explored. A high p-doping in the quantum wells is found to increases the carrier and gain non-uniformity across the active region. The QW region close to the n-contact side does not provide much gain at high optical powers. An asymmetric optical waveguide design is proposed to help reduce the gain non-uniformity across the active region. By shifting the optical modal peak toward the p-side, the modal overlap between the gain region and the optical mode is improved and a more even carrier and gain distribution is obtained. However, due to reduced bandgap of the quaternary InGaAsP p-cladding, an enhanced electron leakage out of the QWs into the p-cladding degrades the laser efficiency and increases the threshold current. Transient time - domain simulations are also performed to determine the small-signal modulation response of the laser promising a simulated high modulation bandwidth suitable for direct-modulation applications.
机译：利用自洽二维数值模拟，对具有应变补偿多量子阱（MQW）有源区（InGaAsP阱，InGaAlAs势垒）的横向电流注入1.55微米激光器进行了仿真研究。探索了量子阱中不同的台面宽度和p掺杂对载流子和整个有源区增益均匀性的影响。发现量子阱中的高p掺杂会增加载流子并增加整个有源区的不均匀性。靠近n接触侧的QW区域在高光功率下不会提供太多增益。提出了一种非对称光波导设计，以帮助减少整个有源区的增益不均匀性。通过将光学模态峰值移向p侧，可以改善增益区域和光学模式之间的模态重叠，并获得更均匀的载流子和增益分布。但是，由于减小了四元InGaAsP p包层的带隙，增强了电子从QW泄漏到p包层的效率，降低了激光效率，并增加了阈值电流。还进行了瞬态时域仿真以确定激光器的小信号调制响应，从而保证了适合直接调制应用的仿真高调制带宽。

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