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Study of the physical properties of CuS thin films grown by SILAR method

机译：SILAR法生长CuS薄膜的物理性能研究

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摘要

CuS thin films were obtained using the SILAR method on an amorphous glass substrate. All experiments were performed at room temperature. CuS thin films were deposited at 30, 40, 50 and 60 cycles, respectively. Structural, morphological and optical properties of the structures that increase the thickness of nanostructured CuS thin films were investigated. X-ray diffraction, scanning electron microscopy, atomic force microscopy, RAMAN and optical absorption measurements were carried out in order to examine the physical properties of CuS thin films. As a result of the analysis, we can say that the thickness increase positively affects the crystal structure of CuS thin films. In addition, the energy bandgap range of CuS thin films ranged from 2.22 to 1.78eV. Analysis results of CuS thin films using SILAR method show that thickness is an important factor for thin film studies.
机译：使用SILAR方法在无定形玻璃基板上获得CuS薄膜。所有实验均在室温下进行。 CuS薄膜分别以30、40、50和60个循环沉积。研究了增加纳米结构CuS薄膜厚度的结构的结构，形态和光学性质。为了检查CuS薄膜的物理性能，进行了X射线衍射，扫描电子显微镜，原子力显微镜，RAMAN和光吸收测量。分析的结果可以说，厚度的增加对CuS薄膜的晶体结构有积极影响。另外，CuS薄膜的能带隙范围为2.22至1.78eV。 SILAR方法对CuS薄膜的分析结果表明，厚度是薄膜研究的重要因素。

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