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Function reconsideration of indium bump in InSb IRFPAs

机译：InSb IRFPA中铟凸块的功能重新考虑

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Indium bumps are generally accepted to possess functions of electrical connection, mechanical support and heat transfer in flip-chip devices. After comparing the distribution of stress components along different paths in InSb infrared focal plane arrays (IRFPAs), we ascertain that local enhancement effects of the stress components are remarkable in regions where the indium bumps are. More specifically, the local enhanced tensile stress in InSb chip connected with the indium bumps can lead to the local fracture of the InSb chip, and the locally enhanced shear and peeling stresses may give rise to the local interfacial delamination between the InSb chip and the indium bumps. These inferences are confirmed by the observed local failure characteristics, such as the distribution of the local delamination, the distribution of the crack widths, and the distribution of the cracks. In addition, the simulated Z-component strain distribution in InSb IRFPAs is also consistent with the backside surface profile of the InAs/GaSb IRFPAs fabricated in America with the identical structure, that is, the InSb chip glued with the indium bumps is concave downward, and the InSb chip glued with the underfill is convex upward. Judging from all these confirmed simulation results, we are confident that the indium bumps play a pivotal role in inducing the local failure of InSb IRFPAs. So the role of the indium bumps in causing the local failure of InSb IRFPAs needs to be supplemented and emphasized to comprehensively evaluate the structural reliability of InSb IRFPAs.
机译：通常认为铟凸块具有倒装芯片器件中的电连接，机械支撑和传热的功能。在比较了应力成分在InSb红外焦平面阵列（IRFPA）中沿不同路径的分布之后，我们确定了应力成分的局部增强作用在铟凸点所在的区域中显着。更具体地，与铟凸块连接的InSb芯片中局部增强的拉伸应力可导致InSb芯片的局部断裂，并且局部增强的剪切应力和剥离应力可引起InSb芯片与铟之间的局部界面剥离。颠簸。这些推论由观察到的局部破坏特征所证实，例如局部分层的分布，裂纹宽度的分布以及裂纹的分布。此外，InSb IRFPA中模拟的Z分量应变分布也与美国制造的具有相同结构的InAs / GaSb IRFPA的背面表面轮廓一致，即，与铟凸块粘合的InSb芯片向下凹，与底部填充胶粘合的InSb芯片向上凸出。从所有这些已确认的仿真结果来看，我们相信铟凸块在引发InSb IRFPA局部失效方面起着关键作用。因此，需要补充和强调铟凸点在引起InSb IRFPAs局部失效中的作用，以全面评估InSb IRFPAs的结构可靠性。

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