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首页> 外文期刊>Optical and quantum electronics >Preparation of Cu-Fe-O thin films via post oxidation of iron/ copper bilayers: structural, optical and electrical properties
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Preparation of Cu-Fe-O thin films via post oxidation of iron/ copper bilayers: structural, optical and electrical properties

机译：铁/铜双层膜的后氧化制备Cu-Fe-O薄膜：结构，光学和电学性质

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摘要

Cu-Fe-O thin films were prepared via vacuum thermal evaporation of Fe and Cu after what the obtained bilayer FeCu was annealed in free air at different temperatures during 2h. The obtained Cu-Fe-O thin films were characterized using X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), electrical and spectrophotometric measurements. X-ray diffraction (XRD) analysis revealed the presence of Fe2O3, CuO and CuFeO2 phases. Cu-Fe-O thin films exhibit rough surfaces by analyzing the film morphologies by scanning electron microscopy. Energy dispersive spectroscopy (EDS) technique was used to evaluate Cu-Fe-O thin films stoichiometry. The optical properties reveal that the absorption coefficient of Cu-Fe-O thin films is larger than 10(5)cm(-1) and two optical direct band gaps in the range 1.65-2.2eV were found. The Wemple and DiDomenico model was used to study the dispersion of the refractive index in terms of the single oscillator model. So, optical parameters such as refractive index, extinction coefficient, oscillator energy and dispersion energy were calculated. In addition and by using the model of Spitzer and Fan, the electrical free carrier susceptibility and the carrier concentration on the effective mass ratio were evaluated. All the samples present relatively high electrical resistivity.
机译：通过将Fe和Cu的双层Fe Cu在不同温度下在自由空气中退火2小时后，通过Fe和Cu的真空热蒸发制备Cu-Fe-O薄膜。使用X射线衍射（XRD），扫描电子显微镜（SEM），电学和分光光度测量对获得的Cu-Fe-O薄膜进行表征。 X射线衍射（XRD）分析显示出Fe2O3，CuO和CuFeO2相的存在。通过用扫描电子显微镜分析膜的形态，Cu-Fe-O薄膜表现出粗糙的表面。能量色散光谱（EDS）技术用于评估Cu-Fe-O薄膜的化学计量。光学性质表明，Cu-Fe-O薄膜的吸收系数大于10（5）cm（-1），并且发现两个光学直接带隙在1.65-2.2eV范围内。使用Wemple和DiDomenico模型来研究单振荡器模型的折射率色散。因此，计算了诸如折射率，消光系数，振荡器能量和色散能量的光学参数。此外，通过使用Spitzer和Fan的模型，评估了无电载流子的磁化率和载流子浓度对有效质量比的影响。所有样品均具有相对较高的电阻率。

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  • 来源
    《Optical and quantum electronics》 |2019年第4期|99.1-99.15|共15页
  • 作者

    Ben Jbara H.; Abdelkader D.; Akkari F. Chaffar; Kanzari M.; Yazdi M. Arab Pour; Billard A.;

  • 作者单位

    Univ Tunis El Manar Lab Photovolta & Mat Semicond Ecole Natl Ingenieurs Tunis BP 37 Tunis 1002 Tunisia|Univ Tunis Ecole Natl Super Ingenieurs Tunis 13 Ave Taha Hussein Tunis 1008 Tunisia;

    Univ Tunis El Manar Lab Photovolta & Mat Semicond Ecole Natl Ingenieurs Tunis BP 37 Tunis 1002 Tunisia;

    Univ Tunis El Manar Lab Photovolta & Mat Semicond Ecole Natl Ingenieurs Tunis BP 37 Tunis 1002 Tunisia|Univ Tunis Inst Preparatoire Etud Ingenieurs Tunis Tunis 1089 Tunisia;

    Univ Bourgogne Franche Comte CNRS Inst FEMTO ST UTMB UMR 6174 Site Montbeliard F-90010 Belfort France;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Cu-Fe-O; Thermal evaporation; Oxidation; Delafossite; Optical properties; Electrical properties;

    机译：铜铁氧热蒸发;氧化;德拉福石;光学性质;电性能;

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