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CO_2 laser-induced micro-plume treatment of silicon: technique and application

机译：CO_2激光诱导的硅微粉化处理：技术与应用

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摘要

A method for treating the surface of crystalline silicon (alpha-Si) covered with a fused silica (SiO2) plate by a laser-induced plume arising from the absorption of CO2 laser radiation in glass is presented. The mechanism of micro-plume formation and the effect of this micro-plume on alpha-Si sample are considered. The alpha-Si processing regimes were determined that relate the depth of the formed relief to the radiation power density, the temperature of the micro-plume formed during SiO2 irradiation was measured and reached 3000 K. The diffraction phase gratings were designed, manufactured on silicon, and tested, they successfully split 10.6 mu m laser beam at 0 and +/- 1 diffraction orders. The method belongs to the group of direct writing methods and is easily adapted to different types of diffraction elements on the surface of Si and other materials transparent to 10 mu m irradiation.
机译：提出了一种通过吸收玻璃中CO 2激光辐射而产生的激光诱导羽流来处理覆盖有熔融石英（SiO 2）板的晶体硅（α-Si）表面的方法。考虑了微团块形成的机理以及该微团块对α-Si样品的影响。确定了将所形成的浮雕的深度与辐射功率密度相关联的α-Si处理方案，测量了在SiO2辐照期间形成的微粉的温度，并达到了3000K。设计并在硅上制造了衍射相光栅。并经过测试，他们成功地以0和+/- 1的衍射级分裂了10.6微米的激光束。该方法属于直接写入方法的组，并且容易适用于硅和其他对10微米辐射透明的材料表面上的不同类型的衍射元素。

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