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Metal-insulator-metal waveguides with lateral electrical pumping

机译：金属绝缘体 - 金属波导，具有横向电泵

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摘要

Metal-insulator-metal (MIM) waveguides are demonstrated which have electrically pumped semiconductor gain medium at their core. In particular electrical contacts are made well away from the optical mode and carriers are transported to the gain medium via semiconductor pathways a few tens of nanometers thick. Wet chemical etching is employed to form the gain medium cores, which can have widths on the order of 150 nanometers (nm). Total thickness of the layers between the metal sheets in the MIM structure is approximately 260 nm. Spectra obtained from devices with wider core widths operating at low temperatures and wavelengths near 1550 nm are examined. The nanowire like gain medium cores have an approximately rectangular cross section. Key process steps to form these waveguide structures with their electrically pumped cores are also described.
机译：将金属绝缘体 - 金属（MIM）波导被证明，其在其芯处具有电动泵浦半导体增益介质。 特别地，从光学模式脱离电触点，并且通过半导体路径向增益介质传送载波几十纳米厚。 采用湿化学蚀刻来形成增益介质芯，其可以具有150纳米（Nm）的宽度。 MIM结构中金属板之间的层的总厚度约为260nm。 检查从在低温下操作的更宽芯宽度和在1550nm附近的波长的装置获得的光谱。 像增益介质芯一样的纳米线具有近似矩形的横截面。 还描述了与其电泵浦核形成这些波导结构的关键处理步骤。

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