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首页> 外文期刊>Optical and quantum electronics >Effect of annealing temperature on optimizing the structural, linear-nonlinear optical properties of Cd_(1-x)Zn_xS nanocrystalline thin films
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Effect of annealing temperature on optimizing the structural, linear-nonlinear optical properties of Cd_(1-x)Zn_xS nanocrystalline thin films

机译：退火温度对优化CD_（1-X）Zn_XS纳米晶薄膜结构，线性非线性光学性能的影响

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摘要

The present work reports the study on effect of annealing at different temperature and dissimilar Cd/Zn ratios on optical linear and nonlinear properties of Cd_(1-x)Zn_xS (in x ratios of =0.00, 0.01, 0.03, 0.05 and 0.1 wt. % of Zn) thin films deposited by spray pyrolysis (SP) technique. All the fabricated films are polycrystalline in nature and having a hexagonal crystal structure with the single phase of CdS was confirmed by Powder X-ray diffraction studies (P-XRD). The Scherer rule was used to assess the size of the crystallite and was found to be increasing with increasing annealing temperature. FESEM images display uniform grains and decrease marginally with an increase in doping content and annealing. The optical energy band gap (Eg) of the prepared films ranged from 2.40 eV to 2.64 eV. The laser-induced damage threshold (LDT) value of the annealed Cd_(1-x)Zn_xS thin film is 0.1520 KW/cm~2. The NLO parameters of the prepared samples were calculated at 532 nm from the Z-scan data under solid state continuous wave laser irradiation and the 3rd-order NLO components such as β, n_2 and x~((3)) were found to be enhanced with the annealing temperature i.e. from 1.58× 10~(-5)to 4.85×10~(-3) (cmW~(-1)), 1.08×10~(-8) to 4.38×10~(-8) (cm~2W~(-1)) and 7.22× 10~(-7) to 5.94× 10~(-6)(esu) respectively. These favourable results of NLO parameters suggests, the current fabricated nanstructured films are capable material for photonic device applications.
机译：本作者报告了对不同温度和不同温度和不同的CD / Zn比的退火对CD_（1-x）Zn_xs的非线性性质的影响的研究（以×0.00,0.01,0.03,0.05和0.1wt的x比为= 0.00,0.03,0.05和0.1wt。通过喷雾热解（SP）技术沉积的Zn）薄膜。所有制造的薄膜本质上是多晶的，并且通过粉末X射线衍射研究（P-XRD）确认具有Cds的单相的六边形晶体结构。 Scherer规则用于评估结晶石的尺寸，并且发现随着退火温度的增加而增加。 FESEM图像显示均匀晶粒并随着掺杂含量和退火的增加而略微下降。制备薄膜的光学能带隙（例如）的范围为2.40eV至2.64eV。退火的CD_（1-x）Zn_XS薄膜的激光诱导的损伤阈值（LDT）值为0.1520kW / cm〜2。在固态连续波激光照射下，从固态连续波激光照射的Z扫描数据和诸如β，N_2和X〜（（3））下的3rd阶NLO组分以532nm计算制备的样品的NLO参数。退火温度，即从1.58×10〜（-5）至4.85×10〜（-3）（CMW〜（-1）），1.08×10〜（-8）至4.38×10〜（ - ）（ CM〜2W〜（-1））和7.22×10〜（-7）分别为5.94×10〜（-6）（ESU）。 NLO参数的这些有利的结果表明，目前的制造的纳图薄膜是用于光子器件应用的能力。

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