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首页> 外文期刊>Optical engineering >High-operating temperature InAsSb/AISb heterostructure infrared detectors grown on GaAs substrates by molecular beam epitaxy
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High-operating temperature InAsSb/AISb heterostructure infrared detectors grown on GaAs substrates by molecular beam epitaxy

机译：GaAs衬底上通过分子束外延生长的高工作温度InAsSb / AISb异质结构红外探测器

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摘要

InAsSb/AISb barrier detectors were grown on (100) semi-insulating GaAs substrates by a molecular beam epitaxy. We compare the performance of two detectors with different active layers denoted as p~+B_ppB_pN~+ and p~+B_pnn~+. lnAs_(081)Sb_(0.19) absorber allows to operate up to 5.3-μm cut-off wavelengths at 230 K. p~+B_pnn~+ detector (n-type absorber) exhibits diffusion-limited dark currents above 200 K. AlSb barrier provides low dark currents and suppresses surface leakage currents. With a value of 0.13 A/cm~2 at 230 K, the current is of about an order of magnitude larger than determined by the "Rule 07." Dark currents of p~+B_ppB_pN~+ detector (p-type absorber) are much higher due to a contribution of Shockley-Read-Hall mechanisms. On the other hand, a device with a p-type absorber exhibits the highest value of current responsivity, up to 2.5 A/W, pointing out that there is a tradeoff between dark current performance and quantum efficiency.
机译：InAsSb / AISb势垒探测器通过分子束外延生长在（100）个半绝缘GaAs衬底上。我们比较了具有不同有源层的两个检测器的性能，分别表示为p〜+ B_ppB_pN〜+和p〜+ B_pnn〜+。 lnAs_（081）Sb_（0.19）吸收体允许在230 K的条件下操作高达5.3μm的截止波长。p〜+ B_pnn〜+检测器（n型吸收体）在200 K以上具有扩散限制的暗电流。AlSb势垒提供低暗电流并抑制表面泄漏电流。在230 K时，值为0.13 A / cm〜2，该电流大约比“规则07.”确定的电流大一个数量级。p〜+ B_ppB_pN〜+检测器（p型吸收器）的暗电流）由于Shockley-Read-Hall机制的贡献而更高。另一方面，带有p型吸收器的器件表现出最高的电流响应值，高达2.5 A / W，指出在暗电流性能和量子效率之间需要权衡。

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  • 来源
    《Optical engineering》 |2018年第12期|127104.1-127104.6|共6页
  • 作者

    Malgorzata Kopytko; Emilia Gomolka; Piotr Martyniuk; Pawel Madejczyk; Jaroslaw Rutkowski; Antoni Rogalski;

  • 作者单位

    Military University of Technology, Institute of Applied Physics, Warsaw, Poland;

    Military University of Technology, Institute of Applied Physics, Warsaw, Poland;

    Military University of Technology, Institute of Applied Physics, Warsaw, Poland;

    Military University of Technology, Institute of Applied Physics, Warsaw, Poland;

    Military University of Technology, Institute of Applied Physics, Warsaw, Poland;

    Military University of Technology, Institute of Applied Physics, Warsaw, Poland;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    infrared detectors; barrier detectors; high-operating temperature;

    机译：红外探测器障碍探测器;高工作温度;

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