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Structural, electrical, and photoelectric properties of p-NiO-CdTe heterojunctions

机译:p-NiO / n-CdTe异质结的结构,电学和光电性能

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摘要

p-NiO-CdTe-photosensitive heterojunctions were prepared by the deposition of nickel oxide thin films onto n-type single-crystal CdTe substrates by DC reactive magnetron sputtering. The analysis of capacitance-voltage (C - V) characteristics, measured at different frequencies of the small amplitude AC signal and corrected by the effect of the series resistance, provided evidence of the presence of electrically charged interface states, which significantly affect the measured capacitance. The dominant current transport mechanisms in the heterojunctions were determined at forward and reverse biases. Using "light" Ⅰ - Ⅴ characteristics, we determined the open-circuit voltage V_(oc) = 0.42 V, the short-circuit current /_(sc) = 57.5 μA/cm~2, and the fill factor FF = 0.24 under white light illumination with the intensity of 80 mW/cm~2.
机译:p-NiO / n-CdTe光敏异质结是通过直流反应磁控溅射将氧化镍薄膜沉积在n型单晶CdTe衬底上而制备的。在小幅度交流信号的不同频率下测量并通过串联电阻的影响进行校正的电容-电压(C-V)特性分析提供了存在带电界面状态的证据,该状态会显着影响所测量的电容。异质结中的主要电流传输机制是在正向和反向偏置下确定的。利用“光”Ⅰ-Ⅴ特性,确定开路电压V_(oc)= 0.42 V,短路电流/ _(sc)= 57.5μA/ cm〜2,填充系数FF =在白光照射下强度为0.24,强度为80 mW / cm〜2。

著录项

  • 来源
    《Optical engineering》 |2018年第1期|017116.1-017116.5|共5页
  • 作者单位

    Chemivtsi National University, Department of Electronics and Energy Engineering, Chernivtsi, Ukraine;

    Chemivtsi National University, Department of Electronics and Energy Engineering, Chernivtsi, Ukraine;

    Helmholtz-Zentrum Berlin fur Materialien und Energie GmbH, Institute fur Silizium Photovoltaik, Berlin, Germany;

    Chemivtsi National University, Department of Electronics and Energy Engineering, Chernivtsi, Ukraine;

    Chemivtsi National University, Department of Electronics and Energy Engineering, Chernivtsi, Ukraine;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    NiO; CdTe; heterojunction; current transport;

    机译:氧化镍碲化镉;异质结目前的运输;

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