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首页> 外文期刊>Optical engineering >High efficiency mid-infrared interband cascade LEDs grown on low absorbing substrates emitting >5 mW of output power
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High efficiency mid-infrared interband cascade LEDs grown on low absorbing substrates emitting >5 mW of output power

机译：生长在低吸收性基板上的高效中红外带间级联LED，其发射功率> 5 mW

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摘要

We present interband cascade light-emitting devices with incoherent and broadband light emission peaked at a wavelength of around 3.7 μm. The substrate-side-emitting devices display higher wall plug efficiencies and maximum output powers than any earlier mid-infrared LEDs operating in continuous wave at room temperature. To reduce absorption losses, the epitaxial structures were grown on low doped (low absorbing) GaSb substrates. The nine active stages were positioned in different configurations to investigate the impact of constructive or destructive interference when reflected from the epitaxial-side metallization of the flip-chip mounted devices. A comparison shows improved electrical properties and outcoupling efficiencies when all active stages are centered within a single antinode of the optical field. The optimized voltage efficiency combined with low optical losses lead to a maximum wall plug efficiency of 0.7%. Flip-chip mounted devices with a 640-μm squared mesa reached output powers of up to 5.1 mW at ambient temperatures with driving current (voltage) of 0.6 A (5.1 V).
机译：我们介绍了带间级联发光器件，其非相干和宽带发光峰值在大约3.7μm的波长处。与在室温下连续波工作的任何早期中红外LED相比，衬底侧发射器件显示出更高的壁塞效率和最大输出功率。为了减少吸收损失，在低掺杂（低吸收）GaSb衬底上生长外延结构。将这九个有源级放置在不同的配置中，以研究从倒装芯片安装的器件的外延侧金属化反射时相长干涉或相消干涉的影响。比较表明，当所有有源级都集中在光场的单个波腹内时，电性能和耦合效率会提高。优化的电压效率与低的光损耗相结合，可实现0.7％的最大墙塞效率。具有640μm平方台面的倒装芯片安装的设备在环境温度下以0.6 A（5.1 V）的驱动电流（电压）达到了高达5.1 mW的输出功率。

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