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Model-free determination of optical constants: application to undoped and Ga-doped ZnO

机译：光学常数的无模型确定：在未掺杂和Ga掺杂的ZnO中的应用

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摘要

For single slabs of uniform material, such as bulk semiconductors, we derive closed-form expressions for absorption and reflection coefficients, α and R, respectively, in terms of measured reflectance and trans-mittance, R_m and T_m. The formula for α can replace the several commonly used approximations for α as a function of T_m and in particular does not require αd» 1, where d is the thickness. Thus, it can be applied to weak impurity absorptions, such as Fe absorption in Fe-doped GaN. Finally, the real (η) and imaginary (κ) parts of the index of refraction (n = η + iκ) can be obtained from a and R and agree well with η and κ results obtained from other experiments. For multilayer structures, "effective" values of α, R, η, and κ are obtained, but they can often be assigned to a particular layer. This technique has been successfully applied to many bulk and layered structures.
机译：对于均匀材料的单个平板（例如块状半导体），我们分别根据测量的反射率和透射率R_m和T_m得出吸收系数和反射系数α和R的闭合形式。 α的公式可以代替作为T_m的函数的几种常用的α近似值，特别是不需要αd»1，其中d是厚度。因此，它可以应用于弱杂质吸收，例如掺铁的GaN中的铁吸收。最后，折射率的实部（η）和虚部（κ）（n =η+iκ）可以从a和R获得，并且与其他实验获得的η和κ结果非常吻合。对于多层结构，可以获得“有效”值α，R，η和κ，但通常可以将它们分配给特定的层。该技术已成功应用于许多块状和分层结构。

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  • 来源
    《Optical engineering》 |2017年第3期|034112.1-034112.5|共5页
  • 作者

    David C. Look; Buguo Wang; Kevin D. Leedy;

  • 作者单位

    Wright State University, Semiconductor Research Center, Dayton, Ohio, United States,Air Force Research Laboratory Sensors Directorate, Wright-Patterson Air Force Base, Dayton, Ohio, United States;

    Wright State University, Semiconductor Research Center, Dayton, Ohio, United States;

    Air Force Research Laboratory Sensors Directorate, Wright-Patterson Air Force Base, Dayton, Ohio, United States;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    absorption coefficient; reflection coefficient; reflectance; transmittance; index of refraction; ZnO;

    机译：吸收系数反射系数反射率透射率折射率;氧化锌;

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