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首页> 外文期刊>Optical engineering >Demonstration of a quick process to achieve buried heterostructure quantum cascade laser leading to high power and wall plug efficiency
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Demonstration of a quick process to achieve buried heterostructure quantum cascade laser leading to high power and wall plug efficiency

机译:演示实现掩埋异质结构量子级联激光器的快速过程,从而实现高功率和壁塞效率

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摘要

Together with the optimal basic design, buried heterostructure quantum cascade laser (BH-QCL) with semi-insulating regrowth offers a unique possibility to achieve an effective thermal dissipation and lateral single mode. We demonstrate here the realization of BH-QCLs with a single-step regrowth of highly resistive (>1 × 10~8 ohm • cm) semi-insulating InP:Fe in <45 min for the first time in a flexible hydride vapor phase epitaxy process for burying ridges etched down to 10 to 15 μm depth, both with and without mask overhang. The fabricated BH-QCLs emitting at ~4.7 and ~5.5 μm were characterized. 2-mm-long 5.5-μm lasers with a ridge width of 17 to 22 μm, regrown with mask overhang, exhibited no leakage current. Large width and high doping in the structure did not permit high current density for continuous wave (CW) operation. 5-mm-long 4.7-μm BH-QCLs of ridge widths varying from 6 to 14 μm regrown without mask overhang, besides being spatially monomode, TM_(00), exhibited wall plug efficiency (WPE) of ~8 to 9% with an output power of 1.5 to 2.5 W at room temperature and under CW operation. Thus, we demonstrate a quick, flexible, and single-step regrowth process with good pla-narization for realizing buried QCLs leading to monomode, high power, and high WPE.
机译:结合最佳的基本设计,具有半绝缘长势的埋藏异质结构量子级联激光器(BH-QCL)提供了实现有效散热和横向单模的独特可能性。我们在此展示了在柔性氢化物气相外延中首次在<45分钟内实现高电阻(> 1×10〜8 ohm•cm)半绝缘InP:Fe单步长生的BH-QCLs掩埋蚀刻到10至15μm深度的脊的工艺,无论有没有掩模悬垂。制备的BH-QCL分别在〜4.7和〜5.5μm处发射。脊宽为17至22μm的2毫米长的5.5μm激光器,随着掩模的伸出而重新生长,没有泄漏电流。结构中的大宽度和高掺杂不允许连续波(CW)操作获得高电流密度。 5mm长的4.7μmBH-QCL,其脊宽在6至14μm之间变化,没有掩模悬垂长出,除了空间单模TM_(00)外,其壁塞效率(WPE)约为8%至9%,在室温和连续操作下,输出功率为1.5至2.5W。因此,我们展示了一种快速,灵活且单步的再生过程,具有良好的模拟性,可实现掩埋QCL,从而实现单模,高功率和高WPE。

著录项

  • 来源
    《Optical engineering》 |2014年第8期|087104.1-087104.6|共6页
  • 作者单位

    Laboratory of Semiconductor Materials, Department of Materials and Nano Physics, School of ICT, KTH-Royal Institute of Technology, Electrum 229, 164 40 Kista, Sweden;

    Alcatel-Thales Ⅲ-Ⅴ Lab, THALES Research & Technology France, Campus Polytechnique, 1 avenue Augustin Fresnel, 91767 Palaiseau cedex, France;

    Laboratory of Semiconductor Materials, Department of Materials and Nano Physics, School of ICT, KTH-Royal Institute of Technology, Electrum 229, 164 40 Kista, Sweden,Epiclarus AB, 164 40 Kista, Sweden;

    Laboratory of Semiconductor Materials, Department of Materials and Nano Physics, School of ICT, KTH-Royal Institute of Technology, Electrum 229, 164 40 Kista, Sweden;

    Alcatel-Thales Ⅲ-Ⅴ Lab, THALES Research & Technology France, Campus Polytechnique, 1 avenue Augustin Fresnel, 91767 Palaiseau cedex, France;

    Harvard University, School of Engineering and Applied Sciences, 205 A Pierce Bldg, 29 Oxford Street, Cambridge, Massachusetts 0213, United States;

    Harvard University, School of Engineering and Applied Sciences, 205 A Pierce Bldg, 29 Oxford Street, Cambridge, Massachusetts 0213, United States;

    Laboratory of Semiconductor Materials, Department of Materials and Nano Physics, School of ICT, KTH-Royal Institute of Technology, Electrum 229, 164 40 Kista, Sweden;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    buried heterostructure quantum cascade lasers; high-power; high wall plug efficiency quantum cascade laser; hydride vapor phase epitaxy regrowth;

    机译:掩埋异质结构量子级联激光器;大功率;高壁塞效率量子级联激光器;氢化物气相外延再生;

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