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首页> 外文期刊>Optical engineering >Investigation for optoelectronic characteristics and imaging performance of InAs quantum dot covered with ln_(0.1)Ga_(0.9)As/GaAs multilayer based focal plane array
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Investigation for optoelectronic characteristics and imaging performance of InAs quantum dot covered with ln_(0.1)Ga_(0.9)As/GaAs multilayer based focal plane array

机译：ln_（0.1）Ga_（0.9）As / GaAs多层焦平面阵列覆盖的InAs量子点的光电特性和成像性能研究

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摘要

We report on a structure prepared by metalorganic chemical vapor deposition and molecular beam epitaxy techniques incorporated with a standard process of compound semiconductor to achieve ln_(0.1)Ga_(0.9)As/lnAs/ln_(0.1)Ga_(0.9)As quantum dot infrared photodetec-tor (QDIP)-based focal plane array. For investigating the mechanism of carrier transport and optoelectronic behavior, the photoresponse spectra and dark current were measured in agreement with the theoretical simulations. Furthermore, a model is proposed with the systematic analyses and explained for designing high-performance QDIPs based on the calculations of thermal activation energy and detectivity. For QDIP photoresponse measurements, the photovoltaic photoresponse is achieved, which can be attributed to the asymmetric morphology of quantum dot epitaxy. With increasing bias, the photoresponse spectra exhibit a red-shift due to band bending that generates a thinner triangle barrier which increases the escape possibility of the excited carriers situated at lower excited-state levels. The trapezoid-edged scheme enhances infrared coupling and increases the photoresponse intensity. A single-sided gradient Al_xGa_(1-x)As (x = 0.25→0) barrier can suppress the dark-current under bias efficiently. The infrared imaging performance of InGaAs QDIP based on 320x256 FPA is also demonstrated in this paper.
机译：我们报告通过金属有机化学气相沉积和分子束外延技术与化合物半导体的标准工艺相结合而实现的结构，以实现ln_（0.1）Ga_（0.9）As / lnAs / ln_（0.1）Ga_（0.9）As量子点红外基于光电探测器（QDIP）的焦平面阵列。为了研究载流子传输和光电行为的机理，与理论模拟一致地测量了光响应光谱和暗电流。此外，通过系统分析提出了一个模型，并根据热活化能和检测率的计算结果设计了高性能QDIP。对于QDIP光响应测量，实现了光伏光响应，这可以归因于量子点外延的不对称形态。随着偏压的增加，由于带弯曲，光响应谱显示出红移，从而产生较薄的三角形势垒，从而增加了处于较低激发态能级的受激载流子的逸出可能性。梯形方案增强了红外耦合并增加了光响应强度。单侧梯度Al_xGa_（1-x）As（x = 0.25→0）势垒可以有效地抑制偏压下的暗电流。本文还展示了基于320x256 FPA的InGaAs QDIP的红外成像性能。

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