首页> 外文期刊>Optical fiber technology >Passively Q-switched and mode-locked Erbium-doped fiber laser with topological insulator Bismuth Selenide (Bi_2Se_3) as saturable absorber at C- band region
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Passively Q-switched and mode-locked Erbium-doped fiber laser with topological insulator Bismuth Selenide (Bi_2Se_3) as saturable absorber at C- band region

机译:拓扑绝缘体硒化铋(Bi_2Se_3)作为C波段可饱和吸收体的无源Q开关和锁模掺fiber光纤激光器

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摘要

We experimentally demonstrate Q-switched and mode-locked Erbium-doped fiber laser (EDFL) by using topological insulator (TI) Bismuth Selenide (Bi2Se3) as saturable absorber (SA). The fabricated Bi2Se3 SA exhibits modulation depth and saturation intensity at 39.8% and 90.2 MW/cm(2), respectively. By incorporating the fabricated Bi2Se3 SA into the laser cavity, Q-switching operation is generated with repetition rate ranging from 23.5 kHz to 68.2 kHz, pulse width ranging from 2.4 mu s to 8.6 mu s and maximum peak power is calculated at 19.9 mW. Our cavity can also generate soliton mode-locked pulse with repetition rate of 23.3 MHz and pulse width of 0.63 ps by inserting an additional 5 m long single mode fiber (SMF) into the existing laser cavity. Spectral peaks due to Kelly side-bands and four wave mixing (FWM) were observed on the soliton spectrum. Both Q-switching and mode-locking pulses are stable in the laboratory environment, allowing the realization of compact and low cost pulsed fiber laser with Bi2Se3 SA for various photonics applications.
机译:我们通过使用拓扑绝缘体(TI)硒化铋(Bi2Se3)作为可饱和吸收体(SA),实验证明了Q开关和锁模掺Er光纤激光器(EDFL)。制成的Bi2Se3 SA的调制深度和饱和强度分别为39.8%和90.2 MW / cm(2)。通过将制成的Bi2Se3 SA集成到激光腔中,可以在23.5 kHz至68.2 kHz的重复频率,2.4 ms至8.6 ms的脉冲宽度和19.9 mW的最大峰值功率范围内进行Q开关操作。通过在现有的激光腔中插入一条额外的5 m长的单模光纤(SMF),我们的腔还可以生成具有23.3 MHz的重复频率和0.63 ps的脉冲宽度的孤子锁模脉冲。在孤子谱上观察到由于凯利边带和四波混频(FWM)引起的谱峰。 Q开关脉冲和锁模脉冲在实验室环境中都是稳定的,从而使Bi2Se3 SA可以实现紧凑而低成本的脉冲光纤激光器,适用于各种光子学应用。

著录项

  • 来源
    《Optical fiber technology》 |2019年第3期|117-122|共6页
  • 作者单位

    Univ Malaya, Dept Elect Engn, Kuala Lumpur 50603, Malaysia;

    Univ Malaya, Dept Elect Engn, Kuala Lumpur 50603, Malaysia;

    Univ Malaya, Dept Elect Engn, Kuala Lumpur 50603, Malaysia;

    Univ Canterbury, Dept Phys & Astron, Christchurch 8140, New Zealand;

    KDU Univ Coll, Seksyen U1, Shah Alam 40150, Selangor, Malaysia;

    Univ Teknol Malaysia, Fac Sci, Dept Phys, Skudai 81310, Johor Bahru, Malaysia;

    Univ Malaya, Dept Elect Engn, Kuala Lumpur 50603, Malaysia;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Mode-locked; Q-switched; EDFL; Bismuth-selenide; Topological insulator;

    机译:模式锁定;q切换;EDFL;铋 - 硒化物;拓扑绝缘体;

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