Temperature dependence of energy band gap and spontaneous polarization of SbSI nanowires

Marian Nowak; Piotr Szperlich

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Temperature dependence of energy band gap and spontaneous polarization of SbSI nanowires

机译：SbSI纳米线的能带隙和自发极化的温度依赖性

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摘要

For the first time temperature dependence of optical energy gap of antimony sulfoiodide (SbSI) nanowires has been determined. In ferroelectric phase (for 241 K < T< T_c = 292 K) the evaluated indirect forbidden optical energy gap has been fitted by E_(gfl)(T) = [2.195(3) - 10.8(1) × 10~(-4)T]eV. In paraelectric phase (T_c = 292 K

机译：首次确定了硫磺化物（SbSI）纳米线光能隙的温度依赖性。在铁电相中（对于241 K

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来源
《Optical Materials》 |2013年第6期|1200-1206|共7页
作者
Marian Nowak; Piotr Szperlich;
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作者单位

Solid State Physics Section Institute of Physics Silesian University of Technology ul. Krasinskiego 8 40-019 Katowice Poland;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类
关键词
antimony sulfoiodide; nanowires; ferroelectrics; semiconductors; optical energy gap;

机译：硫化锑锑;纳米线;铁电体半导体;光能隙;

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1. Temperature Dependences of Optical Energy Gaps of SbSI@CNT and SbSeI@CNT [J] . M. Jesioneka, M. Nowak, M. Kepinska, Acta Physica Polonica . 2013,第5期

机译：SbSI @ CNT和SbSeI @ CNT的光能隙的温度依赖性
2. Nanostructured CdSe Films in Low Size-Quantization Regime: Temperature Dependence of the Band Gap Energy and Sub-Band Gap Absorption Tails [J] . Biljana Pejova, Bahattin Abay The journal of physical chemistry, C. Nanomaterials and interfaces . 2011,第47期

机译：纳米结构化的CdSe薄膜在低尺寸定量体系中的研究：带隙能量和亚带隙吸收尾巴的温度依赖性
3. Nanostructured CdSe Films in Low Size-Quantization Regime: Temperature Dependence of the Band Gap Energy and Sub-Band Gap Absorption Tails [J] . Biljana Pejova, Bahattin Abay The journal of physical chemistry, C. Nanomaterials and interfaces . 2011,第47期

机译：纳米结构化的CdSe薄膜在低尺寸定量体系中的研究：带隙能量和亚带隙吸收尾巴的温度依赖性
4. Photoluminescence Study on Temperature Dependence of Band Gap Energy of GaAsN Alloys [C] . H. YAGUCHI, S. KIKUCHI, Y. HIJIKATA, Fourth International Conference on Nitride Semiconductors . 2002

机译：GaAsN合金带隙能的温度依赖性光致发光研究
5. Spectroscopic study of hafnium silicate alloys prepared by RPECVD: Comparisons between conduction/valence band offset energies and optical band gaps. [D] . Hong, Joon Goo. 2004

机译：RPECVD制备的硅酸alloy合金的光谱研究：导带/价带偏移能和光学带隙的比较。
6. Temperature dependence of the superconducting energy gaps in Ca9.35La0.65(Pt3As8)(Fe2As2)5 single crystal [O] . Yu-il Seo, Woo-jae Choi, D. Ahmad, -1

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7. Polarization dependence of the electroabsorption in low-temperature grown GaAs for above band-gap energies [O] . Ruff M., Streb D., Dankowski S. U., 1996

机译：低温生长Gaas中电吸收对上述带隙能量的极化依赖性

Temperature dependence of energy band gap and spontaneous polarization of SbSI nanowires

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