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Impact of annealing on physical properties of e-beam evaporated polycrystalline CdO thin films for optoelectronic applications

机译：退火对用于电子应用的电子束蒸发多晶CdO薄膜的物理性能的影响

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摘要

An impact of annealing on the physical properties of polycrystalline CdO thin films is carried out in this study. CdO thin films of thickness 650 nm were fabricated on glass and indium tin oxide (ITO) substrates employing e-beam evaporation technique. The pristine thin films were annealed in air atmosphere at 250 degrees C, 400 degrees C and 550 degrees C for one hour followed by investigation of structural, optical, electrical and morphological properties along with elemental composition using X-ray diffraction (XRD), UV-Vis spectrophotometer, Fourier transform infrared (FTIR) spectrometer, source meter, scanning electron microscopy (SEM) and energy-dispersive spectroscopy (EDS), respectively. XRD patterns confirmed the polycrystalline nature and cubic structure (with space group Fm (3) over barm) of the films. The crystallographic parameters are calculated and found to be influenced by the post-air annealing treatment. The optical study shows that direct band gap is ranging from 1.98 eV to 2.18 eV and found to be decreased with post annealing. The refractive index and optical conductivity are also increased with annealing temperature. The current-voltage characteristics show ohmic behaviour of the annealed films. The surface morphology is observed to be improved with annealing and grain-size is increased as well as EDS spectrum confirmed the presence of cadmium (Cd) and oxygen (O) in the deposited films. (C) 2017 Elsevier B.V. All rights reserved.
机译：在这项研究中进行了退火对多晶CdO薄膜的物理性能的影响。使用电子束蒸发技术在玻璃和铟锡氧化物（ITO）基板上制作了厚度为650 nm的CdO薄膜。将原始薄膜在空气中分别于250摄氏度，400摄氏度和550摄氏度下退火1小时，然后使用X射线衍射（XRD），UV研究结构，光学，电学和形态学性质以及元素组成-Vis分光光度计，傅立叶变换红外（FTIR）光谱仪，源计，扫描电子显微镜（SEM）和能量分散光谱（EDS）。 XRD图谱证实了膜的多晶性质和立方结构（在barm上具有空间群Fm（3））。计算出晶体学参数，发现其受后空气退火处理的影响。光学研究表明，直接带隙在1.98 eV至2.18 eV的范围内，并发现随后退火而减小。折射率和光导率也随着退火温度而增加。电流-电压特性显示出退火膜的欧姆行为。观察到退火后表面形态得到改善，晶粒尺寸增加，EDS光谱证实沉积膜中存在镉（Cd）和氧（O）。 （C）2017 Elsevier B.V.保留所有权利。

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