Engineering of luminescence from Gd_2O_3:Eu~(3+) nanophosphors by pulsed laser deposition

Geo Rajan; K.G. Gopchandran

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Engineering of luminescence from Gd_2O_3:Eu~(3+) nanophosphors by pulsed laser deposition

机译：脉冲激光沉积技术对Gd_2O_3：Eu〜（3+）纳米磷光体的发光工程

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Nanostructured Gd_2O_3:Eu~(3+) thin films were prepared by pulsed laser ablation technique. The dependence of structural, morphological and optical properties of these films on photoluminescence was systematically studied by varying the annealing temperature, Eu~(3+) incorporation concentration and laser fluence. The intensity of the XRD peak from (2 2 2) crystal plane was found to increase with annealing temperature in the range 973-1173 K. Films annealed at 1173 K show a preferential growth along (222) crystal plane of the cubic Gd_2O_3 and enhanced photoluminescence at 612 nm. XRD and Micro-Raman spectra and lattice strain investigations suggest that Eu~(3+) incorporation introduce a strong lattice distortion in Gd_2O_3 matrix. Morphological investigations using atomic force microscopy indicate a strong influence of the annealing process on the surface roughness and particle size. This kind of transparent thin film phosphors may promise for applications in flat-panel displays and X-ray imaging systems.

机译：采用脉冲激光烧蚀技术制备了纳米结构的Gd_2O_3：Eu〜（3+）薄膜。通过改变退火温度，Eu〜（3+）掺入浓度和激光通量，系统地研究了这些薄膜的结构，形态和光学性质对光致发光的依赖性。发现（2 2 2）晶面的XRD峰强度随退火温度在973-1173 K范围内增加。在1173 K退火的薄膜沿立方Gd_2O_3的（222）晶面显示优先生长并增强在612 nm处有光致发光。 XRD和显微拉曼光谱以及晶格应变研究表明，Eu〜（3+）的引入在Gd_2O_3基体中引入了强烈的晶格畸变。使用原子力显微镜的形态学研究表明，退火过程对表面粗糙度和粒径有很大的影响。这种透明的薄膜磷光体有望应用于平板显示器和X射线成像系统。

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来源
《Optical Materials》 |2009年第1期|121-132|共12页
作者
Geo Rajan; K.G. Gopchandran;
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作者单位

Department of Optoelectronics University of Kerala Kariavattom Thiruvananthapuram 695 581 India;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类
关键词
thin films; photoluminescence spectroscopy; optical properties;

机译：薄膜;光致发光光谱;光学性质;

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1. Morphology and crystalline-phase-dependent luminescence of Li-doped Gd_2O_3:Eu~(3+) thin films grown by pulsed laser deposition [J] . S.S. YI, J.S. BAE, K.S. SHIM, Applied Physics. A, Materials Science & Processing . 2005,第4期

机译：脉冲激光沉积生长Li掺杂Gd_2O_3：Eu〜（3+）薄膜的形貌和晶相相关发光
2. Photoluminescence characteristics and energy transfer between Bi~(3+) and Eu~(3+) in Gd_2O_3: Eu~(3+), Bi~(3+) nanophosphors [J] . X.T. Wei, Y.H Chen, X.R. Cheng, Applied physics . 2010,第4期

机译：Gd_2O_3中Bi〜（3+）和Eu〜（3+）之间的发光特性和能量转移：Eu〜（3 +），Bi〜（3+）纳米磷光体
3. Synthesis, characterization, thermo- and photoluminescence properties of Bi~(3+) co-doped Gd_2O_3:Eu~(3+) nanophosphors [J] . N. Dhananjaya, H. Nagabhushana, B.M. Nagabhushana, Applied physics . 2012,第2期

机译：Bi〜（3+）共掺杂Gd_2O_3：Eu〜（3+）纳米磷光体的合成，表征，热致发光性质
4. Luminescence Properties of Bi~(3+) ions co-doped Gd_2O_3:Eu~(3+), Tb~(3+) nanophosphors [C] . Jong Won Chung, Byung Kee Moon, Jung Hyun Jeong, International Nanoelectronics Conference . 2010

机译：Bi〜（3+）离子的发光性能共掺杂Gd_2O_3：Eu〜（3+），Tb〜（3+）纳米磷
5. Enhanced luminescence from europium-doped yttrium oxide thin films grown via pulsed laser deposition. [D] . Jones, Sean Liam. 1997

机译：通过脉冲激光沉积生长的掺euro氧化钇薄膜增强的发光。
6. Comparative Study of the Structure Composition and Electrocatalytic Performance of Hydrogen Evolution in MoSx~2+δ/Mo and MoSx~3+δ Films Obtained by Pulsed Laser Deposition [O] . V. Fominski, M. Demin, D. Fominski, 2020

机译：脉冲激光沉积获得的MoSx〜2 +δ/ Mo和MoSx〜3 +δ膜中氢析出的结构组成和电催化性能的比较研究
7. Synthesis, characterization, thermo- and photoluminescence properties of Bi 3+ co-doped Gd 2O 3:Eu 3+ nanophosphors [O] . Dhananjaya, N., Nagabhushana, H., Nagabhushana, B.M., 2012

机译：Bi 3+共掺杂Gd 2 O 3：Eu 3+纳米荧光粉的合成，表征，热和光致发光特性
8. Hyperthermal Pulsed-Laser Ablation Beams for Film Deposition and Surface Microstructural Engineering. [R] . Lowndes, D. H. 1999

机译：用于薄膜沉积和表面微结构工程的高温脉冲激光烧蚀光束。

Engineering of luminescence from Gd_2O_3:Eu~(3+) nanophosphors by pulsed laser deposition

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