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首页> 外文期刊>Optical Materials >Near infrared quazi-omnidirectional reflector in chalcogenide glasses
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Near infrared quazi-omnidirectional reflector in chalcogenide glasses

机译：硫族化物玻璃中的近红外准全向反射器

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The quazi-omnidirectional reflector was designed as a planar quarter wave stack consisting of the alternating amorphous chalcogenide Ge_(25)S_(75) and Sb_(40)Se_(60) films. Photonic bandgap calculation of the intended reflector predicted ～240 nm omnidirectional and ～450 nm normal incidence first-order bandgaps centred near 1.55 μm for appropriate values of the index of refraction and thickness of the films. The TEM and HR-TEM images of the prepared 7.5 pairs reflector verified good periodicity, smooth interface and amorphous structure of the chalcogenide films deposited by thermal and flash evaporation, respectively. The optical reflectivity measurements revealed 98.8% normal incidence stopband of the reflector at 1.55 μm. We also report the ellipsometry study of the prepared reflector. The TEM and ellipsometry studies confirmed the thickness variation of prepared individual layers to be ±7 and ±9 nm, respectively, compared to theoretical predictions.
机译：准全向反射器设计为平面四分之一波堆叠，由交替的非晶硫族化物Ge_（25）S_（75）和Sb_（40）Se_（60）薄膜组成。对于适当的折射率和薄膜厚度值，预期反射器的光子带隙计算可预测约240 nm的全向和约450 nm的法向入射一阶带隙，中心在1.55μm附近。制备的7.5对反射器的TEM和HR-TEM图像分别证明了通过热蒸发和闪蒸沉积的硫族化物薄膜具有良好的周期性，光滑的界面和非晶结构。光学反射率测量显示在1.55μm处反射镜的法向入射阻带为98.8％。我们还报告了准备好的反射镜的椭偏测量研究。 TEM和椭偏仪研究证实，与理论预测相比，所制备的各个层的厚度变化分别为±7和±9 nm。

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