...
【24h】

All-chalcogenide middle infrared dielectric reflector and filter

机译:全硫属化物中红外介电反射器和滤光片

获取原文
获取原文并翻译 | 示例
           

摘要

We have fabricated a dielectric reflector and a passband filter, both with first order photonic bandgaps in the middle-infrared region around λ = 4 μm. The devices were made from alternating amorphous Ge_(25)S _(75) and Ge_(15)Te_(85) chalcogenide films with high transparency in the middle infrared region stacked in multilayers. Due to high thickness accuracy and periodicity of prepared multilayers we also observed second order photonic bandgaps at λ ~ 1.4 μm. The experimental data were in good agreement with theoretical predictions. The work focused on investigation of compositional homogeneity, surface roughness, thermal and optical properties of individual amorphous Ge_(25)S_(75) and Ge_(15)Te_(85) films. We confirmed chalcogenide materials as being of suitable choice for designing middle-infrared quarter wave stack devices. FT-IR reflectance spectra confirmed occurrence of 99.4% stopband near λ = 4 μm for fabricated reflector and narrow ~ 50% passband of prepared filter near λ = 3.934 μm.
机译:我们制造了一个介电反射器和一个通带滤波器,两者都在λ= 4μm附近的中红外区域具有一阶光子带隙。该器件由交替堆叠的多层中层红外区具有高透明性的交替非晶Ge_(25)S_(75)和Ge_(15)Te_(85)硫族化物薄膜制成。由于制备的多层膜具有较高的厚度精度和周期性,我们还观察到了λ〜1.4μm处的二阶光子带隙。实验数据与理论预测吻合良好。这项工作的重点是研究单个非晶Ge_(25)S_(75)和Ge_(15)Te_(85)薄膜的成分均匀性,表面粗糙度,热和光学性质。我们确认了硫族化物材料是设计中红外四分之一波堆叠器件的合适选择。 FT-IR反射光谱证实,在λ= 4μm附近,人造反射器存在99.4%的阻带,在λ= 3.934μm附近,所制备滤光片的通带窄〜50%。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号