Structural and optical properties of P-Ga codoping ZnO thin films deposited by magnetron sputtering

Q.P. Wang; Z. Sun; J. Du; P. Zhao; X.H. Wu; X.J. Zhang

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Structural and optical properties of P-Ga codoping ZnO thin films deposited by magnetron sputtering

机译：磁控溅射沉积P-Ga共掺杂ZnO薄膜的结构和光学性质

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The P-Ga codoping ZnO thin firms have been prepared on sapphire substrates by magnetron sputtering. Structural, optical and electrical properties of ZnO film were investigated using X-ray diffraction meter, transmittance spectra and resistivity, respectively. The obtained films were polycrystalline with the hexagonal structure, and a preferred orientation (0002) with the c-axis perpendicular to the substrates. The ZnO thin films became P- type after annealing. We have observed a room resistivity of 0.37 Ω cm and a carrier concentration of 1.6 x 10~(18) cm~(-3) in P-type ZnO film.

机译：通过磁控溅射在蓝宝石衬底上制备了P-Ga共掺杂ZnO薄膜。用X射线衍射仪，透射光谱和电阻率分别研究了ZnO薄膜的结构，光学和电学性质。所获得的膜是具有六边形结构，c轴垂直于基板的优选取向（0002）的多晶。退火后，ZnO薄膜变为P型。我们已经观察到P型ZnO薄膜的室内电阻率为0.37Ωcm，载流子浓度为1.6 x 10〜（18）cm〜（-3）。

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来源
《Optical Materials》 |2007年第11期|p.1358-1361|共4页
作者
Q.P. Wang; Z. Sun; J. Du; P. Zhao; X.H. Wu; X.J. Zhang;
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作者单位

School of Physics and Microelectronics Shandong University Jinan Shandong 250100 PR China;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类工程材料学;
关键词
P-type ZnO film; magnetron sputtering; P-Ga codoping;

机译：P型ZnO薄膜;磁控溅射;磷镓共掺杂;

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Structural and optical properties of P-Ga codoping ZnO thin films deposited by magnetron sputtering

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