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Effect of residual compressive stress on near-ultraviolet InGaN/GaN multi-quantum well light-emitting diodes

机译：残余压应力对近紫外InGaN / GaN多量子阱发光二极管的影响

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摘要

Thinning was investigated to reduce the residual compressive stress in GaN-based near-ultraviolet light-emitting diode (NUV-LED) substrates. This stress has a knock-on effect of reducing piezoelectric fields in the LED structure. As the sapphire substrate thickness is reduced, the compressive stress in the GaN layer is released, resulting in wafer bowing. The wafer bowing-induced mechanical stress alters the piezoelectric fields, which in turn reduces the quantum-confined Stark effect in the InGaN/GaN active region of the LED. The electroluminescence spectral peak wavelength was blue-shifted, and the internal quantum efficiency was improved by about 15% at an injection current of 50 mA. The LED with a 45-μm-thick sapphire substrate exhibited the highest light output power of ～29 mW at an injection current of 50 mA, an improvement by about 39% compared to that of a 150-μm-thick sapphire substrate without increasing the operating voltage. The simulation results confirm that the relaxation of the compressive strain in the InGaN/GaN MQW structure results in the reduction of the piezoelectric field and improves the overlap of electron and hole wave functions with a corresponding increase in IQE.
机译：研究了减薄以减少基于GaN的近紫外发光二极管（NUV-LED）衬底中的残余压应力。该应力具有减小LED结构中的压电场的连锁效应。随着蓝宝石衬底厚度的减小，GaN层中的压应力得以释放，从而导致晶圆弯曲。晶圆弯曲引起的机械应力会改变压电场，进而减小LED的InGaN / GaN有源区中的量子限制斯塔克效应。电致发光光谱峰值波长发生蓝移，并且在50 mA的注入电流下内部量子效率提高了约15％。蓝宝石基板厚度为45μm的LED在注入电流为50mA时显示出最高的光输出功率，约为29mW，与150μm厚度的蓝宝石基板相比，提高了约39％。工作电压。仿真结果证实，InGaN / GaN MQW结构中压缩应变的松弛导致压电场的减小，并改善了电子和空穴波函数的重叠，并相应提高了IQE。

著录项

  • 来源
    《Optical Materials》 |2014年第12期|131-136|共6页
  • 作者

    Wael Z. Tawfik; Seo-Jung Bae; Sang-Wan Ryu; Tak Jeong; June Key Lee;

  • 作者单位

    Department of Materials Science and Engineering Chonnam National University Gwangju 500-757 Republic of Korea Department of Physics Faculty of Science Beni-Suef University Beni-Suef 62511 Egypt;

    Department of Materials Science and Engineering Chonnam National University Gwangju 500-757 Republic of Korea;

    Department of Physics Chonnam National University Cwangju 500-757 Republic of Korea;

    Korea Photonics Technology Institute Gwangju 500-460 Republic of Korea;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    GaN-based UV-LED; Sapphire substrate thickness; Residual compressive stress; EL; IQE; Light output power;

    机译：GaN基UV-LED;蓝宝石衬底厚度;残余压应力;EL;IQE;光输出功率;

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