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首页> 外文期刊>Optical Materials >Fabrication of high-performance UVC photodiodes by Al~(+3) ion adjustment in AZO/Si Heterostructures
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Fabrication of high-performance UVC photodiodes by Al~(+3) ion adjustment in AZO/Si Heterostructures

机译：通过AZO / Si异质结构中的Al〜（+3）离子调节制备高性能UVC光电二极管

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摘要

In this research, fabrication of high-performance UVC photodiodes based on Al: ZnO thin films is reported. AZO thin films were prepared through sol - gel based chemical routes (using organic precursors) followed by a spin coating method. The layers play a role of the n-type semiconductor deposited on the p-type silicon substrate which formed a p-n heterojunction. Optimizing the percentage of dopants, salt concentration, as well as deposition conditions, is essential for achieving high efficiency and reliable devices. For this aim, different samples were characterized under illumination of an ultraviolet source (254 nm, 268.27 mu Wcm(-2)). Then, I-V curves and photoresponsivity of the samples were recorded. A comparison between the results indicates that the sample prepared with a soil concentration of 1 M zinc acetate contains about 2 at, % aluminum has the highest responsivity among the others. Also, studying the photoluminescence spectra of the optimized sample demonstrates that it is significantly sensitive to the wavelength of 260 NM in UVC region. Moreover, the photocurrent to dark current ratio of 1.6 x 10(3), was measured for the most sensitive sample (with 2 at. % Al). In addition, the highest amount of quantum efficiency about 81% was also determined for this sample.
机译：在这项研究中，报道了基于Al：ZnO薄膜的高性能UVC光电二极管的制造。 AZO薄膜是通过基于溶胶-凝胶的化学路线（使用有机前体），然后采用旋涂法制备的。这些层起沉积在形成p-n异质结的p型硅衬底上的n型半导体的作用。优化掺杂剂的百分比，盐浓度以及沉积条件对于实现高效和可靠的设备至关重要。为此，在紫外光源（254 nm，268.27μWcm（-2））的照射下表征了不同的样品。然后，记录样品的IV曲线和光响应性。结果之间的比较表明，在土壤浓度为1 M乙酸锌的情况下制备的样品中，铝的含量约为2 at％，其中铝的响应度最高。此外，研究优化样品的光致发光光谱表明，它对UVC区域中260 NM的波长非常敏感。此外，对于最敏感的样品（含2 at。％的Al）测得的光电流与暗电流之比为1.6 x 10（3）。此外，该样品的最高量子效率约为81％。

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