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Theoretical studies of single and tandem Cu_2ZnSn(S/Se)_4 junction solar cells for enhanced efficiency

机译:单和串联Cu_2ZnSn(S / Se)_4结太阳能电池提高效率的理论研究

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摘要

We simulated photovoltaic characteristics of single heterojunction solar cell with Cu2ZnSnS4 and Cu2ZnSnS4 absorber layer numerically using one dimensional solar cell capacitance simulator (SCAPS-1D). n-CdS/ZnO double buffer layer is used for hetrostructure interfaces with the absorber layer. The cell performance is investigated against variation of different material layer properties such as thickness, carrier concentration, and defect density. First, the performance is optimized for the single junction solar cell with Mo as back contact material with ' similar to 5 eV work function. A double junction CZTS/CZTSe tandem cell structure is realized keeping the same material properties as is used in the single CZTS and CZTSe solar cell simulation and flat band condition is considered at the interface for efficient carrier transport under matching current conditions. Tandem cell performance is determined after matching the current condition for top and bottom sub-cells. The CZTS/CZTSe short circuit current density is similar to 20.98 mA/cm(2) for current matched 211.33 nm thick CZTS top cell in conjunction with 2000 nm bottom cell. The maximum efficiency obtained under the flat band condition at the contact is similar to 21.7% with open circuit voltage similar to 1.324 V.
机译:我们使用一维太阳能电池电容模拟器(SCAPS-1D)数值模拟了具有Cu2ZnSnS4和Cu2ZnSnS4吸收层的单异质结太阳能电池的光伏特性。 n-CdS / ZnO双缓冲层用于与吸收层的异质结构界面。针对不同材料层特性(例如厚度,载流子浓度和缺陷密度)的变化研究了电池性能。首先,对于具有作为类似于5 eV功函数的背接触材料的Mo的单结太阳能电池,性能得到了优化。实现了双结CZTS / CZTSe串联电池结构,保持与单CZTS和CZTSe太阳能电池模拟中使用的材料属性相同的材料特性,并且在界面上考虑了平坦带条件,以在匹配电流条件下有效进行载流子传输。在匹配顶部和底部子电池的当前条件之后,确定串联电池的性能。对于电流匹配的211.33 nm厚的CZTS顶部电池和2000 nm底部电池,CZTS / CZTSe短路电流密度类似于20.98 mA / cm(2)。在开路电压类似于1.324 V的情况下,触点在平带条件下获得的最大效率类似于21.7%。

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