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Effect of hexagonal hillock on luminescence characteristic of multiple quantum wells structure

机译：六角形小丘对多量子阱结构发光特性的影响

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摘要

GaN based ultraviolet multiple quantum well structures grown on a c-plane sapphire substrate by metal organic chemical deposition showed a microstructure with a large amount of huge hexagonal hillocks. The polarity of the sample is confirmed by etching with sodium hydroxide solution. The luminous intensity distribution of a typical hexagonal hillock was investigated by the phototluminescent mapping and the luminous intensity at hillock top regions was found to be 15 times higher than that of the regions around hillocks. The reduction of dislocations, the decreasing of the quantum confirmed stack effect caused by semipolar plane and the inclination of the sidewalls of the hexagonal hillock were responsible for the enhancement of luminous intensity. (C) 2018 Elsevier B.V. All rights reserved.
机译：通过金属有机化学沉积在c面蓝宝石衬底上生长的GaN基紫外多量子阱结构显示出具有大量巨大的六角形小丘的微观结构。通过用氢氧化钠溶液蚀刻来确认样品的极性。通过光致发光映射研究了典型六边形小丘的发光强度分布，发现小丘顶部区域的发光强度是小丘周围区域的发光强度的15倍。位错的减少，由半极性平面引起的量子确认的堆叠效应的减少以及六角形小丘的侧壁的倾斜是造成发光强度增加的原因。 （C）2018 Elsevier B.V.保留所有权利。

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