Optimization of growing green-emitting InGaN/GaN multiple quantum wells on stress-relieving superlattices

Mickevicius J.; Grinys T.; Kadys A.; Tamulaitis G.

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Optimization of growing green-emitting InGaN/GaN multiple quantum wells on stress-relieving superlattices

机译：消除应力超晶格上生长绿色的InGaN / GaN多量子阱的优化

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Optimization of photoluminescence intensity of green-emitting InGaN/GaN multiple quantum wells deposited on a template consisting of low-indium-content short-period superlattice was studied by growing the structures at different temperatures for active layer and template. The importance of carrier localization is revealed. The temperatures for growing the template and the active layer predominantly influence large-scale and small-scale potential fluctuations experienced by nonequilibrium carriers, respectively, while the difference between the temperatures impacts the formation of nonradiative recombination centers, and has to be maintained small to ensure high photoluminescence intensity.

机译：通过在不同温度下生长有源层和模板的结构，研究了沉积在由低铟含量短周期超晶格组成的模板上的绿色发射InGaN / GaN多量子阱的光致发光强度的优化。揭示了载子定位的重要性。用于生长模板和活性层的温度分别主要影响非平衡载流子经历的大规模和小规模电势波动，而温度之间的差异会影响非辐射复合中心的形成，必须保持较小的温度以确保高的光致发光强度。

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来源
《Optical Materials》 |2018年第8期|71-74|共4页
作者
Mickevicius J.; Grinys T.; Kadys A.; Tamulaitis G.;
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作者单位

Vilnius Univ Inst Photon & Nanotechnol Sauletekio Al 3 LT-10257 Vilnius Lithuania;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类
关键词
III-Nitrides; InGaN; MOCVD; SPSL; Photoluminescence; Carrier localization;

机译：III-氮化物;氮化镓;MOCVD;SPSL;光致发光;运营商本地化;

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专利

1. Optimization of growing green-emitting InGaN/GaN multiple quantum wells on stress-relieving superlattices [J] . Mickevicius J., Grinys T., Kadys A., Optical Materials . 2018,第auga期

机译：消除应力超晶格上生长绿色的InGaN / GaN多量子阱的优化
2. Influence of the InGaN/GaN quasi-superlattice underlying layer on photoluminescence in InGaN/GaN multiple quantum wells [J] . Mu Qi, Xu Mingsheng, Wang Xuesong, Physica, E. Low-dimensional systems & nanostructures . 2016,第Null期

机译：InGaN / GaN准超晶格底层对InGaN / GaN多量子阱中的光致发光的影响
3. The Effect Of The Low-mole Ingan Structure And Ingan/gan Strained Layer Superlattices On Optical Performance Of Multiple Quantum Well Active Layers [J] . Shi Jong Leem, Young Chul Shin, Kyoung Chan Kim, Journal of Crystal Growth . 2008,第1期

机译：低摩尔Ingan结构和Ingan / gan应变层超晶格对多层量子阱有源层光学性能的影响
4. Reduction of efficiency droop for InGaN/GaN multiple quantum well light emitting diodes using AlGaN/GaN superlattice structure [C] . S Sheshnag, S K Banik, S Mukherjee, IEEE Annual Information Technology, Electronics and Mobile Communication Conference . 2016

机译：使用AlGaN / GaN超晶格结构减少InGaN / GaN多量子阱发光二极管的效率下降
5. InGaN/GaN Multiple Quantum Well Light-Emitting Diodes grown on Polar, Semi-polar and Non-Polar Orientations. [D] . Mukund, Aadhithya Hosalli. 2014

机译：以极性，半极性和非极性方向生长的InGaN / GaN多量子阱发光二极管。
6. InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers [O] . Wenbin Lv, Lai Wang, Jiaxing Wang, 2012

机译：具有优化的GaN势垒的InGaN / GaN多层量子点黄绿色发光二极管
7. The microstructure, local indium composition and photoluminescence in green-emitting InGaN/GaN quantum wells [O] . N. CHERY, T.H. NGO, M.P. CHAUVAT, 2017

机译：绿色发光Ingan / GaN量子阱中的微观结构，局部铟组分和光致发光

Optimization of growing green-emitting InGaN/GaN multiple quantum wells on stress-relieving superlattices

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