FT-IR and FT-Raman spectra of a series of oxidized a, a'-diethyl end-capped oligothienyls: a spectroscopic study of conjugational model defects

J. Casado; S. Hotta; V. Herndndez

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FT-IR and FT-Raman spectra of a series of oxidized a, a'-diethyl end-capped oligothienyls: a spectroscopic study of conjugational model defects

机译：一系列氧化的α，a'-二乙基封端的寡噻吩基化合物的FT-IR和FT-Raman光谱：共轭模型缺陷的光谱研究

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摘要

We present the results of an FT-IR and FT-Raman vibrational spectroscopic study carried out on a,a-diethyl- quinquethiophene and a,a-diethylsexithiophene upon doping with iodine vapours and nitrosyl salts. The wavenumbers and intensity dispersions observed for the doping induced Raman bands with the oxidation degree are utilized to elucidate the conjugational defect-type. The near-infrared Raman spectra indicate the existence of radical cations and dications as the major oxidized species in the I_2-doped and NO-doped oligomers, respectively.

机译：我们介绍了在掺入碘蒸气和亚硝基盐后，对a，a-二乙基喹啉噻吩和a，a-二乙基sexithiophene进行FT-IR和FT-Raman振动光谱研究的结果。利用具有氧化度的掺杂诱发的拉曼带所观察到的波数和强度色散来阐明共轭缺陷类型。近红外拉曼光谱表明，分别存在于I_2掺杂和NO掺杂的低聚物中，作为主要氧化物种的自由基阳离子和阳离子存在。

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来源
《Optical Materials》 |1999年第3期|p.321-325|共5页
作者
J. Casado; S. Hotta; V. Herndndez;
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作者单位

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类工程材料学;
关键词
Oligothiophenes; FT-IR; FT-Raman; Radical-cations; Dications;

机译：寡噻吩;红外光谱FT-拉曼自由基阳离子;阳离子;

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1. FT-Raman spectroscopic study, aided by quantum chemical DFT calculations, of a series of oligothiophenes end-capped by nitriles [J] . Guzman VC, Ortiz RP, Delgado MCR, Journal of Molecular Structure . 2005,第0期

机译：FT-拉曼光谱研究，借助量子化学DFT计算，对被腈封端的一系列低聚噻吩进行了研究
2. Vibrational Spectroscopic Study of a Series of #alpha#,#alpha#'-Diethyl End-Capped Oligothiophenes with Different Chain Lengths in the Neutral State [J] . J. Casado, S. Hotta, V. Hernandez, The journal of physical chemistry, A. Molecules, spectroscopy, kinetics, environment, & general theory . 1999,第7期

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FT-IR and FT-Raman spectra of a series of oxidized a, a'-diethyl end-capped oligothienyls: a spectroscopic study of conjugational model defects

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