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ITO/PVK/Alq/metal LEDs: influence of PVK doping with DCM and of passivation with sputtered Si_3N_4

机译：ITO / PVK / Alq /金属LED：DCM掺杂PVK和溅射Si_3N_4钝化的影响

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摘要

This paper reports on the fabrication and on the characterization of LEDs consisting of two layers f a spinned-on hole transport layer, PVK layer and an evaporated tris(8-hydroxy) quinoline aluminum (Alq) emitter and an electron injection layer. Dye-doping of PVK with DCM induced a red shift of the spectrum due to concomitant emission from Alq and DCM. Some devices were passivated with Si_3N_4 deposited by RF sputtering. In that latter case, the threshold voltage of the LED slightly increased, but the emitted power was kept constant. The LED surface was imaged with a lateral resolution as low as 30 μm using Scanning ElectroLuminescence Imaging Microscopy (SELIM), a technique derived from the well-known Scanning Photo-Luminescence (SPL) widely used for III--V and II-VI semiconductors. This technique was successfully used to assess the lateral homogeneity of the emitting surface, and the aging of the diodes. At increasing working time, the devices did not show dark spots formation but a uniform decrease of the luminescence.
机译：本文报道了由两层组成的LED的制造和特性，该层由两层组成：旋转的空穴传输层，PVK层和蒸发的三（8-羟基）喹啉铝（Alq）发射极和电子注入层。由于伴随有Alq和DCM的发射，用DCM对PVK进行染料掺杂会引起光谱的红移。一些器件被通过RF溅射沉积的Si_3N_4钝化。在后一种情况下，LED的阈值电压略有增加，但发射功率保持恒定。使用扫描电致发光成像显微镜（SELIM）对LED表面进行横向分辨率低至30μm的成像，该技术源自广泛用于III-V和II-VI半导体的众所周知的扫描光致发光（SPL）技术。该技术已成功用于评估发射表面的横向均匀性和二极管的老化。在增加工作时间时，这些装置没有显示出黑点的形成，而是发光的均匀降低。

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