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Effects of diamond-like carbon in TPD-Alq_3 doped PVK organic light-emitting devices

机译：类金刚石碳在TPD-Alq_3掺杂的PVK有机发光器件中的作用

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摘要

Effects of an ultrathin (approx 1 nm) diamond-like carbon (DLC) layer in single-layer organic light-emitting devices (OLEDs) that consist of ITO/(TPD-Alq_3 doped PVK)/Al were investigated. DLC layers deposited by using Nd: YAG laser at laser wavelengths of 355 nm were high in sp~3 content and resistivity (DLC_(UV)) while that of 1064 nm laser were lower in sp~3 content and resistivity (DLC_(IR)), as characterized by Raman spectroscopy and resistivity measurements. Although emission were obtained for all the devices, only the device of 1TO/DLC_(UV)/ (TPD-Alq3 doped PVK)/Al exhibited enhanced current density and brightness with lower turn-on voltage as compared to a standard device. Devices of ITO/DLC_(IR)/(TPD-Alq_3 doped PVK)/A1 and ITO/(TPD-Alq_3 doped PVK)/DLC_(UV)/Al showed poor current and brightness characteristics but failed at higher applied voltage. The enhance performance of device with high resistivity/sp~3 DLC film suggests the mechanisms of barrier reduction by sufficiently thin insulating layer which increase the probability of tunneling of carriers at 1T0 and PVK interface.
机译：研究了由ITO /（TPD-Alq_3掺杂的PVK）/ Al组成的单层有机发光器件（OLED）中超薄（约1 nm）类金刚石碳（DLC）层的影响。使用Nd：YAG激光在355 nm激光下沉积的DLC层的sp〜3含量和电阻率（DLC_（UV））高，而1064 nm激光的sp〜3含量和电阻率（DLC_（IR））低。 ），以拉曼光谱和电阻率测量为特征。尽管获得了所有器件的发射，但是与标准器件相比，只有1TO / DLC_（UV）/（TPD-Alq3掺杂的PVK）/ Al器件显示了更高的电流密度和亮度，并且具有更低的开启电压。 ITO / DLC_（IR）/（TPD-Alq_3掺杂的PVK）/ A1和ITO /（TPD-Alq_3掺杂的PVK）/ DLC_（UV）/ Al的器件显示出不良的电流和亮度特性，但在更高的施加电压下失效。具有高电阻率/ sp〜3 DLC膜的器件的增强性能表明，通过足够薄的绝缘层减少势垒的机制增加了1T0和PVK界面处载流子隧穿的可能性。

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