首页> 外文期刊>Optics Letters >Electroluminescence from silicon-based photonic crystal microcavities with PbSe quantum dots
【24h】

Electroluminescence from silicon-based photonic crystal microcavities with PbSe quantum dots

机译:具有PbSe量子点的硅基光子晶体微腔的电致发光

获取原文
获取原文并翻译 | 示例
           

摘要

The characteristics of electrically injected silicon-based photonic crystal microcavities with PbSe quantumndots are described. The device includes suitable electron and hole transporting layers and contact layers.nThe measured electroluminescence at room temperature exhibits an enhanced spontaneous emission. Thenresonant mode is observed at u0001=1669 nm with a spectral linewidth of 4 nm, corresponding to a cavity Qnfactor of u0001420. © 2010 Optical Society of America
机译:描述了具有PbSe量子点的电注入硅基光子晶体微腔的特性。该器件包括合适的电子和空穴传输层以及接触层。n在室温下测得的电致发光表现出增强的自发发射。然后在u0001 = 1669 nm处观察到共振模式,光谱线宽为4 nm,对应于u0001420的腔Qnfactor。 ©2010美国眼镜学会

著录项

  • 来源
    《Optics Letters》 |2010年第4期|p.1-3|共3页
  • 作者单位

    Junseok Heo,1 Ting Zhu,2 Chunfeng Zhang,2 Jian Xu,2 and Pallab Bhattacharya1,*1Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science,University of Michigan, 1301 Beal Avenue, Ann Arbor, Michigan 48109-2122, USA2Department of Engineering Science and Mechanics, Pennsylvania State University,212 Earth and Engineering Science, University Park, Pennsylvania 16802, USA;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号