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Accumulated charge measurement using a substrate with a restricted-bottom-electrode structure

机译：使用具有受限底部电极结构的基板进行累积电荷测量

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摘要

Accumulated charge measurement (ACM) is a new experimental technique for organic semiconductors to evaluate the charge injection barrier at the semiconductor-metal interface directly using a metal-insulator-semiconductor-metal (MISM) capacitor. In this technique, the precise estimation of the electrostatic capacity of the insulator layer (C-I) is required for the analysis. The information of this parameter is, in principle, included in the ACM data; however, it is not directly evaluated because of the error resulting from the charge-spreading effect in an organic MISM capacitor with an unrestricted electrode structure. Therefore, the C-I in previous ACM experiments has been independently estimated from the area of the electrode. In this study, a novel design of a substrate with a restricted-bottom-electrode structure is reported. Using the newly designed substrate, it was possible to suppress the charge-spreading effect and successfully estimate precise values of C-I directly from the ACM data. Subsequently, it was possible to evaluate the injection barriers at the metal-free phthalocyanine (H2Pc)-Ag and pentacene-Au interfaces, which were 0.4 and 0.15 eV, respectively. The built-in potentials in the semiconductor layer were also determined for the samples used in the measurement.
机译：累积电荷测量（ACM）是有机半导体通过使用金属-绝缘体-半导体-金属（MISM）电容器直接评估半导体-金属界面处的电荷注入势垒的一项新实验技术。在此技术中，分析需要精确估计绝缘层（C-1）的静电电容。该参数的信息原则上包含在ACM数据中；然而，由于具有不受限制的电极结构的有机MISM电容器中电荷扩散效应所引起的误差，因此无法直接进行评估。因此，先前的ACM实验中的C-I是根据电极面积独立估算的。在这项研究中，报道了一种具有底部电极受限结构的基板的新颖设计。使用新设计的基板，可以抑制电荷扩散效应，并可以直接从ACM数据成功估算出C-1的精确值。随后，可以评估在无金属酞菁（H2Pc）-Ag和并五苯-Au界面处的注入势垒，分别为0.4和0.15 eV。还确定了用于测量中的样品在半导体层中的内置电势。

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