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首页> 外文期刊>Organic Electronics >Boost the performance of inverted perovskite solar cells with PEDOT:PSS/Graphene quantum dots composite hole transporting layer
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Boost the performance of inverted perovskite solar cells with PEDOT:PSS/Graphene quantum dots composite hole transporting layer

机译:通过PEDOT:PSS /石墨烯量子点复合空穴传输层提高反钙钛矿太阳能电池的性能

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摘要

The inverted p-i-n structure perovskite solar cells show great potential in wearable devices and flexible solar cells. Yet the commonly used PEDOT:PSS hole transporting layer still needs to be optimized in order to pursue superior performances. Here, we have demonstrated that PEDOT:PSS/GQDs composite film can be a potential alternative to replace the PEDOT:PSS. Under optimized conditions, average power conversion efficiencies are boosted from 12.77% for perovskite solar cells fabricated on PEDOT.PSS film to 15.24% for perovskite solar cells fabricated on PEDOT:PSS/GQDs film. A champion power conversion efficiency of 16.15% has also been demonstrated with the optimized PEDOT:PSS/GQDs composite film.
机译:倒置的p-i-n结构钙钛矿型太阳能电池在可穿戴设备和柔性太阳能电池中显示出巨大的潜力。然而,仍然需要对常用的PEDOT:PSS空穴传输层进行优化,以追求卓越的性能。在这里,我们证明了PEDOT:PSS / GQDs复合膜可以替代PEDOT:PSS。在优化条件下,PEDOT.PSS膜上制造的钙钛矿太阳能电池的平均功率转换效率从12.77%提高到PEDOT:PSS / GQDs膜上制造的钙钛矿太阳能电池的15.24%。优化的PEDOT:PSS / GQDs复合膜还证明了16.15%的最高功率转换效率。

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