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首页> 外文期刊>RSC Advances >Efficiency enhancement in inverted planar perovskite solar cells by synergetic effect of sulfated graphene oxide (sGO) and PEDOT:PSS as hole transporting layer
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Efficiency enhancement in inverted planar perovskite solar cells by synergetic effect of sulfated graphene oxide (sGO) and PEDOT:PSS as hole transporting layer

机译：通过硫酸化石墨烯（SGO）和PEDOT的协同作用，倒置平面钙钛矿太阳能电池效率增强：PSS作为空穴传输层

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摘要

Inverted planar perovskite solar cells (PSCs) exhibiting a high power conversion efficiency (PCE) have mainly been demonstrated by using poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) as the hole transport layer (HTL). As an alternative to the PEDOT: PSS, graphene oxide (GO) is also employed as a HTL in PSCs with decent PCEs. However, the strong acidity and hygroscopicity of PEDOT: PSS and insulting property of GO were the major factors for hindering the fabrication of high-performance PSCs. Here, we demonstrated sulfated graphene oxide (sGO) as a HTL replacing the conventionally used GO and PEDOT: PSS in PSCs, but pristine sGO as simple HTL cannot improve photovoltaic performance of PSCs with a maximum efficiency of 9.9%. Hence, we report a simple solution route for preparing a sGO-PEDOT:PSS composite HTL by combining solution-processable sGO with commercialized PEDOT: PSS solution. The PSC fabricated with 1 : 1 sGO-PEDOT: PSS HTL shows a dramatically enhanced PCE of 13.9%, versus 11.5% for PSC with pristine PEDOT: PSS HTL. This promising strategy could be a critical step toward the ideal HTL design for the advancement of practical perovskite solar cells.
机译：通过使用聚（苯乙烯酸酯）（PEDOT）（PEDOT：PSS）作为空穴传输层（HTL），主要证明了表现出高功率转化效率（PCCE）的倒置平面钙钛矿太阳能电池（PSC）。作为PEDOT的替代方法：PSS，石墨烯（GO）也用作具有体面PCE的PSC中的HTL。然而，PEDOT的强酸度和吸湿性：PSS和侮辱性的GO是妨碍高性能PSC制造的主要因素。在这里，我们将硫酸化的石墨烯（SGO）作为替代常规使用的GO和PEDOT：PSCS中的PSS，但是作为简单HTL的原始SGO不能提高PSC的光伏性能，最大效率为9.9％。因此，我们报告了一种简单的解决方案途径，用于制备Sgo-PEDOT：PSS复合HTL，通过将解决方案可加工的SGO与商业化的PEDOT组合，PSS溶液。用1：1 Sgoot制造的PSC：PSS HTL显示出13.9％的显着增强的PCE，对于PSC，具有原始PEDOT：PSS HTL。这一有希望的策略可能是迈向理想的HTL设计的关键步骤，以实现实用的钙钛矿太阳能电池的进步。

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  • 来源
    《RSC Advances》 |2017年第79期|共10页
  • 作者

    Guo Heng; Huang Xu; Pu Bingxue; Yang Jian; Chen Haiyuan; Zhou Yajun; Yang Jin; Li Yulan; Wang Zhiming; Niu Xiaobin;

  • 作者单位

    Univ Elect Sci &

    Technol China State Key Lab Elect Thin Film &

    Integrated Device Chengdu 610054 Sichuan Peoples R China;

    Univ Elect Sci &

    Technol China State Key Lab Elect Thin Film &

    Integrated Device Chengdu 610054 Sichuan Peoples R China;

    Univ Elect Sci &

    Technol China State Key Lab Elect Thin Film &

    Integrated Device Chengdu 610054 Sichuan Peoples R China;

    Univ Elect Sci &

    Technol China State Key Lab Elect Thin Film &

    Integrated Device Chengdu 610054 Sichuan Peoples R China;

    Univ Elect Sci &

    Technol China State Key Lab Elect Thin Film &

    Integrated Device Chengdu 610054 Sichuan Peoples R China;

    Univ Elect Sci &

    Technol China State Key Lab Elect Thin Film &

    Integrated Device Chengdu 610054 Sichuan Peoples R China;

    Univ Elect Sci &

    Technol China State Key Lab Elect Thin Film &

    Integrated Device Chengdu 610054 Sichuan Peoples R China;

    Univ Elect Sci &

    Technol China State Key Lab Elect Thin Film &

    Integrated Device Chengdu 610054 Sichuan Peoples R China;

    Univ Elect Sci &

    Technol China Inst Fundamental &

    Frontier Sci Chengdu 610054 Sichuan Peoples R China;

    Univ Elect Sci &

    Technol China State Key Lab Elect Thin Film &

    Integrated Device Chengdu 610054 Sichuan Peoples R China;

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