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首页> 外文期刊>Organic Electronics >Redox-active ferrocene-containing iridium(Ⅲ) complex for non-volatile flash memory
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Redox-active ferrocene-containing iridium(Ⅲ) complex for non-volatile flash memory

机译：用于非易失性闪存的含氧化还原活性的二氧化烯铱（Ⅲ）配合物

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摘要

A new ferrocene-containing iridium(Ⅲ) complex (complex 2) has been designed and synthesized. Its structure, photophysical property, electrochemistry and memory behaviors were well investigated. The memory device with a sandwich structure of ITO/complex 2/Al (D2) exhibited flash memory performance with a bistable conductive process, which showed a high ON/OFF current ratio of 10~3, long retention time of 10~3 s, and low threshold voltage of -0.55 V. After 10~5 read cycles, no significant degradation was observed in the ON and OFF states at a read voltage of 1.0 V. The ferrocene group of complex 2 serves as the redox-active unit, and a redox memory mechanism is proposed to explain the conductive process based on the analysis of Ⅰ-Ⅴ, cyclic voltam-metry and theoretical calculation data. Thus, the design of redox-active metal complex used for novel nonvolatile memory device provided an alternative strategy for the further development of organic memory materials and devices.
机译：设计和合成了一种新的含二氧化铱（Ⅲ）络合物（综合体2）。它的结构，光物理，电化学和记忆行为得到了很好的研究。具有夹层结构的ITO /复合物2 / Al（D2）的存储装置表现出具有双稳态导电工艺的闪存性能，显示出高于/关闭电流比为10〜3，保留时间为10〜3 s，和低阈值电压为-0.55V。在10〜5读循环之后，在1.0V的读取电压下在开启和断开状态下观察到显着的降解。复合物2的二茂铁​​组用作氧化还原活性单元，提出了一种氧化还原记忆机制，以解释基于Ⅰ-ⅴ，循环伏特 - Metry和理论计算数据的分析的导电过程。因此，用于新型非易失性存储器件的氧化还原活性金属复合物的设计提供了用于进一步发展有机记忆材料和装置的替代策略。

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  • 来源
    《Organic Electronics》 |2020年第10期|105815.1-105815.6|共6页
  • 作者

    Baojie Yang; Yongjing Deng; Peng Tao; Menglong Zhao; Weiwei Zhao; Runze Tang; Chenxi Ma; Qi Tan; Shujuan Liu; Qiang Zhao;

  • 作者单位

    Key Laboratory for Organic Electronics and Information Displays & Jiangsu Key Laboratory for Biosensors Institute of Advanced Materials QAM) Nanjing University of Posts and Telecommunications (NUPT) Nanjing 210023 PR China;

    Key Laboratory for Organic Electronics and Information Displays & Jiangsu Key Laboratory for Biosensors Institute of Advanced Materials QAM) Nanjing University of Posts and Telecommunications (NUPT) Nanjing 210023 PR China;

    Key Laboratory for Organic Electronics and Information Displays & Jiangsu Key Laboratory for Biosensors Institute of Advanced Materials QAM) Nanjing University of Posts and Telecommunications (NUPT) Nanjing 210023 PR China;

    Key Laboratory for Organic Electronics and Information Displays & Jiangsu Key Laboratory for Biosensors Institute of Advanced Materials QAM) Nanjing University of Posts and Telecommunications (NUPT) Nanjing 210023 PR China;

    Key Laboratory for Organic Electronics and Information Displays & Jiangsu Key Laboratory for Biosensors Institute of Advanced Materials QAM) Nanjing University of Posts and Telecommunications (NUPT) Nanjing 210023 PR China;

    Key Laboratory for Organic Electronics and Information Displays & Jiangsu Key Laboratory for Biosensors Institute of Advanced Materials QAM) Nanjing University of Posts and Telecommunications (NUPT) Nanjing 210023 PR China;

    Key Laboratory for Organic Electronics and Information Displays & Jiangsu Key Laboratory for Biosensors Institute of Advanced Materials QAM) Nanjing University of Posts and Telecommunications (NUPT) Nanjing 210023 PR China;

    Key Laboratory for Organic Electronics and Information Displays & Jiangsu Key Laboratory for Biosensors Institute of Advanced Materials QAM) Nanjing University of Posts and Telecommunications (NUPT) Nanjing 210023 PR China;

    Key Laboratory for Organic Electronics and Information Displays & Jiangsu Key Laboratory for Biosensors Institute of Advanced Materials QAM) Nanjing University of Posts and Telecommunications (NUPT) Nanjing 210023 PR China;

    Key Laboratory for Organic Electronics and Information Displays & Jiangsu Key Laboratory for Biosensors Institute of Advanced Materials QAM) Nanjing University of Posts and Telecommunications (NUPT) Nanjing 210023 PR China;

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  • 正文语种 eng
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  • 关键词

    Iridium(Ⅲ) complexes; Ferrocene; Memory devices; Flash; Redox;

    机译：铱星（Ⅲ）复合物;铁茂;内存设备;闪光;氧化还原;

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