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首页> 外文期刊>Organic Electronics >Optimization of gate-bias stability and gas-sensing properties of triethylsilylethynyl anthradithiophene micro-strip field-effect transistors by incorporating insulating polymer
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Optimization of gate-bias stability and gas-sensing properties of triethylsilylethynyl anthradithiophene micro-strip field-effect transistors by incorporating insulating polymer

机译：通过结合绝缘聚合物优化三乙基甲酰基乙炔蒽苯乙烯微带场效液晶体管的栅极 - 偏置稳定性和气体感测性能

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摘要

The control of the microstructure and patterning of 5,11-bis(triethylsilylethynyl)anthradithiophene (TES-ADT) film is essential for high-performance TES-ADT field-effect transistors (FETs) as a NO_2 gas sensor. In this study, a binary blend film based on TES-ADT and insulating polymer was annealed by solvent vapor with patterned PDMS molds. The solvent-containing PDMS mold led to the TES-ADT crystallization under the phase-separation between TES-ADT and PMMA. This resulted in highly crystalline micro-strip films where TES-ADT and the insulating polymer were phase-separated on top and bottom, respectively. The micro-strip structures can have superior gas sensor performance because they have additional gas diffusion paths compared to non-patterned structures. Initial investigations to clarify morphology and microstructure of the films revealed that lateral phase separation got dominant with increasing the portion of the insulating polymer. The blended films were then used as the active layer in the FET-based gas sensors. The use of blended films instead of non-blended TES-ADT film in FETs is advantageous in reducing both the threshold voltage and subthreshold slope while compromising the field-effect mobility. The sensing response as the gas sensors is slightly lower in the blended TES-ADT FET than in the non-blended TES-ADT FET. However, the utilization of blended films significantly enhanced the bias-stress stability. Accordingly, a uniform baseline of the sensor performance was achieved in TES-ADT: insulating polymer blended FETs. This trend was in contrast to an abrupt decrease in the sensing signals of the non-blended TES-ADT FETs. The enhanced bias stability of the blended FETs was exhibited as a result of covering the silanol groups in SiO_2 with a phase-separated insulating polymer. Our results provide a route for to the optimization of bias stability and response in TES-ADT micro-strip gas sensors through the application of a one-step blend technology.
机译：控制5,11-双（三乙基甲酰基乙炔基）炭疽烯（TES-ADT）膜的微观结构和图案化对于高性能TES-ADT场效应晶体管（FET）是NO_2气体传感器的必需品。在该研究中，通过具有图案化的PDMS模具的溶剂蒸气来退火基于TES-ADT和绝缘聚合物的二元共混膜。在TES-ADT和PMMA之间的相分离下，含溶剂的PDMS模具导致TES-ADT结晶。这导致高度结晶的微带薄膜膜，其中TES-ADT和绝缘聚合物分别在顶部和底部相分离。微带结构可以具有优异的气体传感器性能，因为与非图案结构相比，它们具有额外的气体扩散路径。初步研究以澄清薄膜的形态和微观结构显示，随着增加绝缘聚合物的部分，横向相分离得到显着。然后将混合膜用作基于FET的气体传感器中的活性层。在FET中使用混合膜而不是非混合的TES-ADT膜在减少阈值电压和亚阈值斜率的同时在损害现场效应移动性的同时是有利的。作为气体传感器的感测响应在混合的TES-ADT FET中略低于非混合的TES-ADT FET中。然而，混合膜的利用显着提高了偏压稳定性。因此，在TES-ADT中实现了传感器性能的均匀基线：绝缘聚合物混合FET。这种趋势与非混合TES-ADT FET的感测信号的突然降低相反。由于将SiO_2中的硅烷醇基团覆盖具有相分离的绝缘聚合物，所示的混合FET的增强偏置稳定性。我们的结果通过应用一步混合技术，提供了一种用于优化TES-ADT微带气体传感器的偏置稳定性和响应的路线。

著录项

  • 来源
    《Organic Electronics》 |2020年第10期|105878.1-105878.7|共7页
  • 作者

    Do Hun Kwak; Hyun Ho Choi; John E. Anthony; Seunghyun Kim; Huijeong Chae; Jinhyun Hwang; Shichoon Lee; Hui Joon Park; Bong-Gi Kim; Wi Hyoung Lee;

  • 作者单位

    Department of Organic and Nano System Engineering Konkuk University Seoul 05029 Republic of Korea;

    School of Materials Science and Engineering Gyeongsang National University Jinju 52828 Republic of Korea;

    Center for Applied Energy Research University of Kentucky Lexington 40511 USA;

    Department of Organic and Nano System Engineering Konkuk University Seoul 05029 Republic of Korea;

    Department of Organic and Nano System Engineering Konkuk University Seoul 05029 Republic of Korea;

    Department of Organic and Nano System Engineering Konkuk University Seoul 05029 Republic of Korea;

    Department of Aero-Materials Engineering Jungwon University Goesan 28023 Republic of Korea;

    Department of Organic and Nano Engineering Hanyang University Seoul 04763 Republic of Korea;

    Department of Organic and Nano System Engineering Konkuk University Seoul 05029 Republic of Korea Department of Organic and Nano Engineering Hanyang University Seoul 04763 Republic of Korea;

    Department of Organic and Nano System Engineering Konkuk University Seoul 05029 Republic of Korea Department of Organic and Nano Engineering Hanyang University Seoul 04763 Republic of Korea;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    5; 11 -bis(triethylsilylethynyl); anthradithiophene; Gate-bias stability; Organic field-effect transistor; Gas-sensing properties; Insulating polymer; Micro-strip;

    机译：5;11 -BIS（三甲基甲硅烷基乙炔基）;蒽噻吩;门偏置稳定性;有机场效应晶体管;气体传感特性;绝缘聚合物;微条带;

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