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首页> 外文期刊>Organic Electronics >Ultra-thin alumina layer encapsulation of bulk heterojunction organic photovoltaics for enhanced device lifetime
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Ultra-thin alumina layer encapsulation of bulk heterojunction organic photovoltaics for enhanced device lifetime

机译：本体异质结有机光伏电池的超薄氧化铝层封装，可延长器件寿命

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摘要

Successful organic photovoltaic (OPV) device fabrication is contingent on selecting an effective encapsulation barrier layer to preserve device functionality by inhibiting atmosphere-induced degradation. In this work, ultra-thin AlO_x layers are deposited by atomic layer deposition (ALD) to encapsulate pre-fabricated OPV devices. A summary of ALD recipe effects (temperature, cycling time, and number of cycles) on AlO_x film growth and device longevity is presented. First, AlO_x film growth on the hydrophobic OPV surface is shown to occur by a 3D island growth mechanism with distinct nucleation and cluster growth regions before coalescence of a complete encapsulation layer with a thickness ≥7 nm by 500 cycles. Encapsulated device performance testing further demonstrates that reducing ALD processing temperature to 100 ℃ minimizes OPV phase segregation and surface oxidation loss mechanisms as evidenced by improved short circuit current and fill factor retention when compared with the conventional 140-150 ℃ range. Ultra-thin A1O, encapsulation by ALD provides significant device lifetime enhancement (～30% device efficiency after 2000 h of air exposure), which is well beyond other ALD-based encapsulation works reported in the literature. Furthermore, the interfacial bonding strength at the OPV-AlO_x interface is shown to play a crucial role in determining film failure mode and therefore, directly impacts ultimate device lifetime.
机译：成功的有机光伏（OPV）器件制造取决于选择有效的封装阻挡层，以通过抑制大气引起的降解来保持器件功能。在这项工作中，通过原子层沉积（ALD）沉积了超薄的AlO_x层，以封装预制的OPV器件。总结了ALD配方对AlO_x膜生长和器件寿命的影响（温度，循环时间和循环次数）。首先，疏水性OPV表面的AlO_x膜生长通过具有独特的形核和簇生长区域的3D岛生长机制显示，然后通过500个循环将厚度≥7nm的完整封装层合并。封装器件性能测试进一步证明，与传统的140-150℃相比，将ALD处理温度降低至100℃可以最大程度地降低OPV相偏析和表面氧化损失机理，这通过改善的短路电流和填充因子保持率得以证明。 ALD封装的超薄AlO可以显着延长器件的使用寿命（暴露于空气中2000 h后，器件效率提高约30％），这远远超出了文献中报道的其他基于ALD的封装工作。此外，显示在OPV-AlO_x界面处的界面结合强度在确定薄膜失效模式中起着至关重要的作用，因此直接影响最终的器件寿命。

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  • 来源
    《Organic Electronics》 |2014年第1期|1-8|共8页
  • 作者

    Michael D. Clark; Michael L. Jespersen; Romesh J. Patel; Benjamin J. Leever;

  • 作者单位

    Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, OH 45433, United States,UES Inc., 4401 Dayton-Xenia Rd., Dayton, OH 45432, United States;

    University of Dayton Research Institute, 300 College Park, Dayton, OH 45469, United States;

    Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, OH 45433, United States,UES Inc., 4401 Dayton-Xenia Rd., Dayton, OH 45432, United States;

    Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, OH 45433, United States;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Organic photovoltaic; Atomic layer deposition; Encapsulation coating; Device lifetime;

    机译：有机光伏;原子层沉积;封装涂层;设备寿命;

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