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Factors governing photo- and dark currents in lateral organic photo-detectors

机译：控制横向有机光电探测器中光电流和暗电流的因素

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摘要

We study the factors governing the dark and photo currents in lateral organic photodetec-tors (OPD). The dark current is found to be strongly limited by space charge limited conduction (SCLC) across a highly depleted gap and arises mostly from transient capacitive currents due to the charge accumulation in the organic layers near the contacts. Similarly, the photocurrent is found to be strongly limited by the collection of photogenerated carriers at the contacts, which limits the sensitivity of lateral OPDs. Furthermore, evidence of the contribution of some photons falling outside of the gap area are reported and have to be taken into account when one wants to conduct accurate external quantum efficiency estimates of lateral OPDs. Finally, it is found that the dark current is significantly increased after the device is exposed to light, likely to be due to the filling of charge traps by photo-generated carriers, while the photocurrent remains unchanged, leading to a decrease in the overall sensitivity of the device upon repeated exposure to light. The results shed the light on the Derformance limitations in lateral OPDs.
机译：我们研究了横向有机光电探测器（OPD）中控制暗电流和光电流的因素。发现暗电流受到跨越高度耗尽的间隙的空间电荷限制传导（SCLC）的强烈限制，并且主要由瞬态电容性电流引起，这是由于触点附近有机层中的电荷积累所引起的。类似地，发现光电流受到触点处光生载流子的收集的强烈限制，这限制了横向OPD的灵敏度。此外，报告了一些光子落在间隙区域之外的贡献的证据，当人们想要对侧向OPD进行精确的外部量子效率估算时，必须考虑到这一点。最后，发现在器件暴露于光后，暗电流会显着增加，这可能是由于光生载流子填充了电荷陷阱，而光电流却保持不变，从而导致整体灵敏度降低反复暴露于光线下的设备的外观。结果揭示了侧向OPD的性能限制。

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  • 来源
    《Organic Electronics》 |2014年第6期|1096-1104|共9页
  • 作者

    T.Borel; Q.Wang; H.Aziz;

  • 作者单位

    Department of Electrical and Computer Engineering and Waterloo Institute of Nanotechnology, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3C1, Canada;

    Department of Electrical and Computer Engineering and Waterloo Institute of Nanotechnology, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3C1, Canada;

    Department of Electrical and Computer Engineering and Waterloo Institute of Nanotechnology, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3C1, Canada;

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  • 正文语种 eng
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  • 关键词

    Lateral; Top-contact; OPD; Space charge limited conduction;

    机译：侧;顶部接触;OPD;空间电荷限制传导;

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