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首页> 外文期刊>Journal of Materials Chemistry, C. materials for optical and electronic devices >High responsivity and low dark current nonpolar GaN-based ultraviolet photo-detectors
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High responsivity and low dark current nonpolar GaN-based ultraviolet photo-detectors

机译：高响应度和低暗电流非极性GaN的紫外线照片探测器

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摘要

The nonpolar a-plane and m-plane of GaN are anisotropic due to the fact that in-plane stresses of nonpolar GaN along different directions are varied, which is considered to be the reason why they are chosen for the preparation of polarization-sensitive ultraviolet (UV) photo-detectors (PDs), etc., when compared to polar c-plane GaN-based UV PDs. However, the nonpolar GaN-based UV PDs suffer from poor-quality GaN epitaxial films, which limit their performance enhancement. Herein, we report the fabrication of high responsivity and low dark current nonpolar a-plane GaN-based metal-semiconductor-metal (MSM) UV PDs, by using high-quality a-plane GaN epitaxial films grown on r-plane sapphire substrates through control of the dislocation density. The approximate to 2.5 m-thick GaN epitaxial films were grown by the combination of low-temperature pulsed laser deposition and high-temperature metal-organic chemical deposition technologies and were then fabricated into MSM UV PDs. The MSM UV PDs were revealed to have a high responsivity of 0.74 A W-1 and a low dark current of 1.3 nA at an applied bias of 2 V, as well as a very small full-width at half-maximum for GaN(11-20) of 360 arcsec. The performance is better than the results for all of the nonpolar GaN-based MSM UV PDs ever reported. These UV PDs shed light on the potential for wide applications.
机译：由于沿着不同方向的非极性GaN的面内应力变化，GaN的非极性A平面和M平面是各向异性的，这被认为是它们选择它们用于制备极化敏感紫外线的原因（UV）与基于极性C平面GaN的UV PD相比，照片检测器（PDS）等。然而，基于非极性GaN的UV PDS患有劣质的GaN外延薄膜，这限制了它们的性能增强。在此，我们通过使用在R平面蓝宝石基板上生长的高质量的A平面GaN外延薄膜通过控制位错密度。通过低温脉冲激光沉积和高温金属 - 有机化学沉积技术的组合生长至2.5M厚的GaN外延薄膜，然后制造成MSM UV PDS。显示MSM UV PDS以具有0.74A W-1的高响应度，并且在2V的施加偏压下具有1.3An的低暗电流，以及GaN的半最大的非常小的全宽度（11 -20）360 arcsec。性能优于曾经报告过的所有非极性GAN的MSM UV PD的结果。这些紫外线PDS揭示了广泛应用的潜力。

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