Achieving good bias stress reliability in organic transistor with vertical channel

著录项

• 来源
  《Organic Electronics》 |2014年第7期|1531-1535|共5页
• 作者

  Hung-Cheng Lin; Hsiao-Wen Zan; Hsin-Fei Meng;

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• 作者单位

  Department of Photonics and Institute of Electro-Optics, National Chiao Tung University, 1001 Ta Hsueh Rd., 300 HsinChu, Taiwan;

  Department of Photonics and Institute of Electro-Optics, National Chiao Tung University, 1001 Ta Hsueh Rd., 300 HsinChu, Taiwan;

  Institute of Physics, National Chiao Tung University, 1001 Ta Hsueh Rd., 300 HsinChu, Taiwan;

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• 收录信息
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  Bias stress; SAM; Organic transistor; OLED driving;

  机译：偏见压力;SAM;有机晶体管;OLED驱动;